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BD167

Description
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
CategoryDiscrete semiconductor    The transistor   
File Size165KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BD167 Overview

Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin

BD167 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-225AA
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment20 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)6 MHz

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