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BD633

Description
Power Bipolar Transistor, 2A I(C), NPN
CategoryDiscrete semiconductor    The transistor   
File Size721KB,8 Pages
ManufacturerSemiconductors Inc.
Download Datasheet Parametric View All

BD633 Overview

Power Bipolar Transistor, 2A I(C), NPN

BD633 Parametric

Parameter NameAttribute value
MakerSemiconductors Inc.
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)2 A
ConfigurationSingle
Minimum DC current gain (hFE)25
Maximum operating temperature140 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)2 W
surface mountNO

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