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BD816

Description
Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-202, Plastic/Epoxy, 3 Pin
CategoryDiscrete semiconductor    The transistor   
File Size41KB,1 Pages
ManufacturerCDIL[Continental Device India Pvt. Ltd.]
Download Datasheet Parametric View All

BD816 Overview

Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-202, Plastic/Epoxy, 3 Pin

BD816 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerCDIL[Continental Device India Pvt. Ltd.]
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-202
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature140 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power dissipation(Abs)2 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
VCEsat-Max0.6 V
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