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P151A

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size375KB,4 Pages
ManufacturerGood-Ark
Environmental Compliance
Suzhou Gotech is a complete and comprehensive manufacturer of design, manufacturing, packaging and sales in the domestic semiconductor discrete device diode industry. From the independent development of front-end chips to various packaging technologies of back-end finished products, it has formed a complete industrial chain. The main products include leadless integrated circuit products and discrete device products with the latest packaging technology, automotive rectifier diodes, power modules, rectifier diode chips, silicon rectifier diodes, switching diodes, Zener diodes, micro bridge piles, military fuses, photovoltaic bypass modules, etc., with a total of more than 50 series and more than 1,500 varieties. The products are widely used in many fields such as aerospace, automobiles, green lighting, IT, household appliances and power supply devices for large equipment. Design and develop silver paste for solar cells and various electronic pastes, and develop and mass produce various new sensors in the field of the Internet of Things.
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P151A Overview

Rectifier Diode,

P151A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGood-Ark
Reach Compliance Codecompliant

P151A Preview

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P151A thru P157A
Surface Mount Glass Passivated Standard Rectifier
Reverse Voltage 50~1000V Forward Current 1.5A
Features
Glass passivated Standard Rectifiers
Low profile, typical thickness 0.8mm
Low forward voltage drop
Low leakage current
Moisture sensitivity: level 1, per J-STD-020
Heatsink structure
High temperature soldering guaranteed: 260℃/10
seconds
iSGA
(SOD-123HS)
Typical Applications
For use of general purpose rectification in lighting, cellular phone, portable device,
power supplies and other consumer applications.
Maximum Ratings
Parameter
(TA = 25 ° unless otherwise noted)
C
Symbol
P151A P152A P153A P154A P155A P156A P157A Unit
VRRM
VRMS
VDC
IF(AV)
IFSM
I
2
t
TJ, TSTG
50
35
50
100
70
100
200
140
200
400
280
400
1.5
52
11
- 55 to + 150
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
A
2
sec
°
C
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
Rating for fusing(t<8.3ms)
Operating junction and storage temperature range
Electrical Characteristics
Parameter
Minimum Breakdown voltage
Test Conditions
(TA = 25 ° unless otherwise noted)
C
Symbol
V
BR
V
F
I
R
t
rr
C
J
R
θJA1)
R
θJL1)
R
θJC2)
P151A P152A P153A P154A P155A P156A P157A Unit
400
1.0
0.88
5
50
1.5
10
63
9
39
℃/W
µA
uS
pF
600
1000
Volts
Ta=25℃,IR=100uA
Maximum instantaneous forward
IF=1.5 A,Ta=25℃
voltage
IF=1.5 A,Ta=125℃
Maximum DC reverse current at
rated DC blocking voltage
Typical reverse recovery time
Typical junction capacitance
Typical thermal resistance
Ta=25℃
Ta=125℃
I
F
=0.5A,I
R
=1.0A,
I
rr
=0.25A
4.0 V, 1 MHz
juntion to ambient
juntion to lead
juntion to case
Note:1),The thermal resistance from junction to ambient or lead, mounted on P.C.B with 5×5mm copper pads,2 OZ,FR4 PCB
2),The thermal resistance from junction to case, mounted on P.C.B with recommended copper pads,2 OZ,FR4 PCB
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