DOHP15-16/18
advanced
Diode Chip
Sonic FRED
Type
Surface
Ag Al
DOHP 15
1600
V
RRM
[V]
1800
I
F
[A]
10
Chip Size
[mm] x [mm]
3.25
3.25
Package
sawn on foil
unsawn wafer
in waffle pack
Mechanical Parameters
Area active
Area total
Wafer size Ø
Thickness
Material
Max. possible chips per wafer
Passivation front side
Metallization top side
Metallization backside
Recom. wire bonds (Al)
Reject Ink Dot Size
Recom. Storage Environment
in orig. container, in dry nitrogen
T
stg
-40 ...
Anode
bondable:
Number
Si FZ
3.8 mm
2
10.6 mm
2
125 mm
265 µm
Orientation <111>
968
Polyimide
Al
solderable (only): Ti / Ni / Ag
2
Ø 380 µm
Ø < 1.0 mm
< 6 month
40 °C
Features:
●
polyimide passivated
●
anode top
Applications:
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode in converters
and motor control circuits
●
Rectifiers in switch mode power
supplies (SMPS)
●
Inductive heating and melting
●
Uninterruptible power supplies (UPS)
●
Ultrasonic cleaners and welders
B
C
D
A
[mm] [mm] [mm] [mm]
3.25
3.25
1.9
1.9
Metallization
Anode
Polyimide
Metallization
Cathode
Thickness
516
IXYS reserves the right to change limits, conditions and dimensions.
© 2005 IXYS all rights reserved
DOHP15-16/18
advanced
Symbol
I
R
V
F
V
F0
r
F
T
VJ
I
F(AV)
I
FSM
*
*
T
C
= 100 °C
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
I
2
t
*
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
R
thJC
t
rr
I
RM
S
t
rr
I
RM
S
*
DC current
V
R
= 1200 V;
-di
F
/dt = 200 A/µs;
t
A
/ t
B
V
R
= 1200 V;
-di
F
/dt = 200 A/µs;
t
B
/ t
A
I
F
= 10 A
T
VJ
= 125°C
I
F
= 10 A
T
VJ
= 25°C
tbd
8
tbd
tbd
10
tbd
Data according to IEC 60747
Conditions
min.
V
R
= V
RRM
I
F
= 10 A
T
VJ
=
25°C
T
VJ
= 125 °C
T
VJ
= 25 °C
T
VJ
= 150 °C
For power-loss calculations only
T
VJ
= 150 °C
-40
180° rect.
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Ratings
typ.
max.
15
500
3.00
3.07
2.1
94
150
12
50
55
tbd
tbd
10
10
tbd
tbd
0.9
µA
µA
V
V
V
m
Ω
°C
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
K/W
ns
A
ns
A
* Data according to assembled Chip
516
IXYS reserves the right to change limits, conditions and dimensions.
© 2005 IXYS all rights reserved
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