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BD826

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size42KB,1 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BD826 Overview

Transistor,

BD826 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSIEMENS
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)1 A
ConfigurationSingle
Minimum DC current gain (hFE)40
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)2 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)75 MHz

BD826 Related Products

BD826 BD827 BD830 BD828 BD825
Description Transistor, Transistor, Transistor, Transistor, Transistor,
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Maker SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS
Reach Compliance Code unknown unknown unknown unknown unknown
Maximum collector current (IC) 1 A 1 A 1 A 1 A 1 A
Configuration Single Single Single Single Single
Minimum DC current gain (hFE) 40 40 40 40 40
JESD-609 code e0 e0 e0 e0 e0
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type PNP NPN PNP PNP NPN
Maximum power dissipation(Abs) 2 W 2 W 2 W 2 W 2 W
surface mount NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 75 MHz 250 MHz 75 MHz 75 MHz 250 MHz

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Index Files: 1429  1747  890  1630  784  29  36  18  33  16 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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