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DMP2067LVT-13

Description
Power Field-Effect Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size444KB,7 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Environmental Compliance
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DMP2067LVT-13 Overview

Power Field-Effect Transistor,

DMP2067LVT-13 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDiodes
package instructionSMALL OUTLINE, R-PDSO-G6
Reach Compliance Codecompliant
Factory Lead Time21 weeks
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)4.2 A
Maximum drain current (ID)4.2 A
Maximum drain-source on-resistance0.045 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)1.6 W
Maximum pulsed drain current (IDM)30 A
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
DMP2067LVT
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
-20V
R
DS(ON)
Max
45mΩ @ V
GS
= -4.5V
65mΩ @ V
GS
= -2.5V
I
D
Max
T
A
= +25°
C
-4.2A
-3.5A
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
ADVANCED INFORMATION
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
), and yet maintain superior switching
performance, making it ideal for high-efficiency power management
applications.
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (Approximate)
Applications
General Purpose Interfacing Switch
Power Management Functions
TSOT26
D
D
1
D
2
G
3
6
D
5
D
4
S
G
S
Equivalent Circuit
Top View
Top View
Pin Configuration
Ordering Information
(Note 4)
Part Number
DMP2067LVT-7
DMP2067LVT-13
Notes:
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
AS9 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: F = 2018)
M = Month (ex: 9 = September)
AS9
20P
Date Code Key
Year
Code
Month
Code
2018
F
Jan
1
2019
G
Feb
2
Mar
3
2020
H
Apr
4
YM
2021
I
May
5
2022
J
Jun
6
Jul
7
2023
K
Aug
8
2024
L
Sep
9
Oct
O
2025
M
Nov
N
2026
N
Dec
D
August 2018
© Diodes Incorporated
DMP2067LVT
Document number: DS41243 Rev. 3 - 2
1 of 7
www.diodes.com

DMP2067LVT-13 Related Products

DMP2067LVT-13 DMP2067LVT-7
Description Power Field-Effect Transistor, Power Field-Effect Transistor,
Is it Rohs certified? conform to conform to
Maker Diodes Diodes
package instruction SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code compliant compliant
Factory Lead Time 21 weeks 22 weeks
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 20 V 20 V
Maximum drain current (Abs) (ID) 4.2 A 4.2 A
Maximum drain current (ID) 4.2 A 4.2 A
Maximum drain-source on-resistance 0.045 Ω 0.045 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G6 R-PDSO-G6
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 6 6
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type P-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) 1.6 W 1.6 W
Maximum pulsed drain current (IDM) 30 A 30 A
surface mount YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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