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M29DW324DT90ZA6F

Description
Flash, 2MX16, 90ns, PBGA63, 7 X 11 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-63
Categorystorage    storage   
File Size879KB,50 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

M29DW324DT90ZA6F Overview

Flash, 2MX16, 90ns, PBGA63, 7 X 11 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-63

M29DW324DT90ZA6F Parametric

Parameter NameAttribute value
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instruction7 X 11 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-63
Contacts63
Reach Compliance Codeunknown
ECCN code3A991.B.1.A
Maximum access time90 ns
Other featuresTOP BOOT BLOCK
Spare memory width8
startup blockTOP
JESD-30 codeR-PBGA-B63
JESD-609 codee1
length11 mm
memory density33554432 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals63
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
typeNOR TYPE
width7 mm
M29DW324DT
M29DW324DB
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
SUPPLY VOLTAGE
– V
CC
= 2.7V to 3.6V for Program, Erase
and Read
– V
PP
=12V for Fast Program (optional)
ACCESS TIME: 70, 90ns
PROGRAMMING TIME
– 10µs per Byte/Word typical
– Double Word/ Quadruple Byte Program
MEMORY BLOCKS
– Dual Bank Memory Array: 16Mbit+16Mbit
– Parameter Blocks (Top or Bottom
Location)
DUAL OPERATIONS
– Read in one bank while Program or Erase
in other
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
V
PP
/WP PIN for FAST PROGRAM and
WRITE PROTECT
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
– 64 bit Security Code
EXTENDED MEMORY BLOCK
– Extra block used as security block or to
store additional information
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29DW324DT: 225Ch
– Bottom Device Code M29DW324DB:
225Dh
Figure 1. Packages
TSOP48 (N)
12 x 20mm
FBGA
TFBGA63 (ZA)
7 x 11mm
FBGA
TFBGA48 (ZE)
6 x 8mm
March 2004
1/50

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