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MGV125-23

Description
Variable Capacitance Diode, KA Band, 1.2pF C(T), 22V, Gallium Arsenide, Hyperabrupt, CASE C01A, 1 PIN
CategoryDiscrete semiconductor    diode   
File Size612KB,8 Pages
ManufacturerCobham Semiconductor Solutions
Environmental Compliance  
Download Datasheet Parametric View All

MGV125-23 Overview

Variable Capacitance Diode, KA Band, 1.2pF C(T), 22V, Gallium Arsenide, Hyperabrupt, CASE C01A, 1 PIN

MGV125-23 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerCobham Semiconductor Solutions
package instructionS-XUUC-N1
Contacts1
Manufacturer packaging codeCASE C01A
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage22 V
ConfigurationSINGLE
Diode Capacitance Tolerance10%
Nominal diode capacitance1.2 pF
Diode component materialsGALLIUM ARSENIDE
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandKA BAND
JESD-30 codeS-XUUC-N1
Number of components1
Number of terminals1
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.25 W
Certification statusNot Qualified
minimum quality factor3000
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Varactor Diode ClassificationHYPERABRUPT
GaAs Hyperabrupt Varactor Diodes
MGV Series
Description
The MGV series of hyperabrupt varactor diodes feature
passivated mesa construction for low leakage and excellent post
tuning drift. Available in three constant gamma families of 0.75,
1.0 and 1.25. These diodes will find application in tunable filters
and oscillators up to 40 GHz. Optimum performance is obtained
using die however packaged devices are available as well
diodes screened per MIL-PRF-19500 and MIL-PRF-38534.
Features
0 to 22 Volt tuning voltage
Tuning ratios up to 10 (typical)
Three constant gamma families -
0.75, 1.0, and 1.25
Screening per MIL-PRF-19500
and MIL-PRF-35834 available
Absolute Maximum Ratings
Parameters
Reverse Voltage
Forward Current
Power Dissipation
Chip
E28, E28X, & 0805-2
H20, P55 & P55
Operating Temperature
Chip
E28, E28X, & 0805-2
H20, P55 & P55
Storage Temperature
Soldering Temperature
Chip
Packaged
22 V
100 mA
250 mW at T
C
= 25
°C,
derate linearly to zero at T
C
= +200
°C
50
100 mW at T
A
= 25
°C,
derate linearly to zero at T
A
= +1
°C
100 mW at T
A
= 25
°C,
derate linearly to zero at T
A
= +200
°C
-65
°C
to +200
°C
-65
°C
to +1
°C
50
-65
°C
to +200
°C
Same as operating temperature.
+320
°C
for 10 seconds
+260
°C
peak per JEDEC J-STD-20C
Rating
Revision Date: 1 4/05
1/1

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