EEWORLDEEWORLDEEWORLD

Part Number

Search

MBRB2035

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 35V V(RRM), Silicon, PLASTIC, D2PAK-3
CategoryDiscrete semiconductor    diode   
File Size134KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

MBRB2035 Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 35V V(RRM), Silicon, PLASTIC, D2PAK-3

MBRB2035 Parametric

Parameter NameAttribute value
MakerVishay
Parts packaging codeTO-263
package instructionPLASTIC, D2PAK-3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, HIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PSSO-G2
Maximum non-repetitive peak forward current150 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage35 V
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationSINGLE
MBRB20..CTPbF/MBR20..CT-1PbF
Vishay High Power Products
Schottky Rectifier, 2 x 10 A
MBRB20..CTPbF
MBR20..CT-1PbF
FEATURES
• 150 °C T
J
operation
• Center tap D
2
PAK and TO-262 packages
• Low forward voltage drop
• High frequency operation
Available
RoHS*
COMPLIANT
Base
common
cathode
2
Base
common
cathode
2
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for Q101 level
2
1 Common
3
cathode Anode
Anode
2
1 Common
3
Anode cathode Anode
D
2
PAK
DESCRIPTION
TO-262
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
2 x 10 A
35/45 V
15 mA at 125 °C
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
FRM
V
RRM
I
FSM
V
F
T
J
t
p
= 5 µs sine
10 Apk, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform (per device)
T
C
= 135 °C (per leg)
VALUES
20
A
20
35/45
1060
0.57
- 65 to 150
V
A
V
°C
UNITS
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
MBRB2035CTPbF
MBR2035CT-1PbF
35
MBRB2045CTPbF
MBR2045CT-1PbF
45
UNITS
V
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94305
Revision: 14-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 210  2148  2286  154  1247  5  44  47  4  26 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号