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VS-MBRB2035CTLM3

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 35V V(RRM), Silicon, TO-263AB, D2PAK-3/2
CategoryDiscrete semiconductor    diode   
File Size205KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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VS-MBRB2035CTLM3 Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 35V V(RRM), Silicon, TO-263AB, D2PAK-3/2

VS-MBRB2035CTLM3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
package instructionD2PAK-3/2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresFREE WHEELING DIODE
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.84 V
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Maximum non-repetitive peak forward current150 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage35 V
Maximum reverse current100 µA
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
VS-MBRB20..CT-M3, VS-MBR20..CT-1-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 10 A
D
2
PAK
TO-262
FEATURES
• 150 °C T
J
operation
• Center tap D
2
PAK and TO-262 packages
• Low forward voltage drop
• High frequency operation
Base
common
cathode
2
Base
common
cathode
2
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
VS-MBRB20..CT-M3
VS-MBR20..CT-1-M3
PRODUCT SUMMARY
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
E
AS
Package
Diode variation
2 x 10 A
35 V, 45 V
0.72 V
15 mA at 125 °C
150 °C
8 mJ
TO-263AB (D
2
PAK), TO-262AA
Common cathode
DESCRIPTION
This center tap Schottky rectifier has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
FRM
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
10 A
pk
, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform (per device)
T
C
= 135 °C (per leg)
VALUES
20
A
20
35/45
1060
0.57
- 65 to 150
V
A
V
°C
UNITS
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-MBRB2035CT-M3
VS-MBR2035CT-1-M3
35
VS-MBRB2045CT-M3
VS-MBR2045CT-1-M3
45
UNITS
V
Revision: 03-Mar-14
Document Number: 94951
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

VS-MBRB2035CTLM3 Related Products

VS-MBRB2035CTLM3 VS-MBRB2035CT-M3 VS-MBRB2045CTR-M3 VS-MBRB2045CT-M3 VS-MBRB2045CTL-M3 VS-MBRB2035CTR-M3
Description Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 35V V(RRM), Silicon, TO-263AB, D2PAK-3/2 Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 35V V(RRM), Silicon, TO-263AB, D2PAK-3/2 Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-263AB, D2PAK-3/2 Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-263AB, D2PAK-3/2 Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-263AB, D2PAK-3/2 Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 35V V(RRM), Silicon, TO-263AB, D2PAK-3/2
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Maker Vishay Vishay Vishay Vishay Vishay Vishay
package instruction D2PAK-3/2 D2PAK-3/2 D2PAK-3/2 R-PSSO-G2 D2PAK-3/2 D2PAK-3/2
Reach Compliance Code unknown compliant compliant compliant compliant unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.84 V 0.84 V 0.84 V 0.84 V 0.84 V 0.84 V
JEDEC-95 code TO-263AB TO-263AB TO-263AB TO-263AB TO-263AB TO-263AB
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
Maximum non-repetitive peak forward current 150 A 150 A 150 A 150 A 150 A 150 A
Number of components 2 2 2 2 2 2
Phase 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 10 A 10 A 10 A 10 A 10 A 10 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260 260 260 260 NOT SPECIFIED
Maximum repetitive peak reverse voltage 35 V 35 V 45 V 45 V 45 V 35 V
Maximum reverse current 100 µA 100 µA 100 µA 100 µA 100 µA 100 µA
surface mount YES YES YES YES YES YES
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED 40 40 40 40 NOT SPECIFIED
Factory Lead Time - 26 weeks 26 weeks 26 weeks 26 weeks -
JESD-609 code - e3 e3 e3 e3 -
Humidity sensitivity level - 1 1 1 1 -
Terminal surface - Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) -
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