IRFE230-JQR-BE4 datasheet, PDF

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IRFE230-JQR-BE4: Description4.8A, 200V, 0.46ohm, N-CHANNEL, Si, POWER, MOSFET; CategoryDiscrete semiconductor The transistor; File Size76KB，2 Pages; ManufacturerSEMELAB; Environmental Compliance

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IRFE230-JQR-BE4 Overview

4.8A, 200V, 0.46ohm, N-CHANNEL, Si, POWER, MOSFET

IRFE230-JQR-BE4 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SEMELAB
package instruction	CHIP CARRIER, R-CQCC-N15
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	AVALANCHE ENERGY RATING
Avalanche Energy Efficiency Rating (Eas)	54 mJ
Shell connection	SOURCE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	4.8 A
Maximum drain-source on-resistance	0.46 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CQCC-N15
JESD-609 code	e4
Number of components	1
Number of terminals	15
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	19 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	GOLD
Terminal form	NO LEAD
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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IRFE230-JQR-BE4 Related Products

	IRFE230-JQR-BE4	IRFE230E4	IRFE230-JQR-B
Description	4.8A, 200V, 0.46ohm, N-CHANNEL, Si, POWER, MOSFET	4.8A, 200V, 0.46ohm, N-CHANNEL, Si, POWER, MOSFET	4.8A, 200V, 0.46ohm, N-CHANNEL, Si, POWER, MOSFET
Is it lead-free?	Lead free	Lead free	Contains lead
Is it Rohs certified?	conform to	conform to	incompatible
Maker	SEMELAB	SEMELAB	SEMELAB
package instruction	CHIP CARRIER, R-CQCC-N15	CHIP CARRIER, R-CQCC-N15	CHIP CARRIER, R-CQCC-N15
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Other features	AVALANCHE ENERGY RATING	AVALANCHE ENERGY RATING	AVALANCHE ENERGY RATING
Avalanche Energy Efficiency Rating (Eas)	54 mJ	54 mJ	54 mJ
Shell connection	SOURCE	SOURCE	SOURCE
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V	200 V	200 V
Maximum drain current (ID)	4.8 A	4.8 A	4.8 A
Maximum drain-source on-resistance	0.46 Ω	0.46 Ω	0.46 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CQCC-N15	R-CQCC-N15	R-CQCC-N15
Number of components	1	1	1
Number of terminals	15	15	15
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	19 A	19 A	19 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD
Terminal location	QUAD	QUAD	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
JESD-609 code	e4	e4	-
Terminal surface	GOLD	GOLD	-

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