Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPERMINI-3
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Central Semiconductor |
| package instruction | SUPERMINI-3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | LOW NOISE |
| Maximum collector current (IC) | 0.05 A |
| Collector-emitter maximum voltage | 50 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 250 |
| JESD-30 code | R-PDSO-G3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 0.275 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | TIN LEAD |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 40 MHz |
| CMST5087TR | CMST5086BK | CMST5086TR | CMST5087BK | |
|---|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPERMINI-3 | Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPERMINI-3 | Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPERMINI-3 | Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPERMINI-3 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| Maker | Central Semiconductor | Central Semiconductor | Central Semiconductor | Central Semiconductor |
| package instruction | SUPERMINI-3 | SUPERMINI-3 | SUPERMINI-3 | SUPERMINI-3 |
| Contacts | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown | _compli |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Other features | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
| Maximum collector current (IC) | 0.05 A | 0.05 A | 0.05 A | 0.05 A |
| Collector-emitter maximum voltage | 50 V | 50 V | 50 V | 50 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 250 | 150 | 150 | 250 |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| JESD-609 code | e0 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | PNP | PNP | PNP | PNP |
| Maximum power dissipation(Abs) | 0.275 W | 0.275 W | 0.275 W | 0.275 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES |
| Terminal surface | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL | DUAL |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 40 MHz | 40 MHz | 40 MHz | 40 MHz |