GS2B datasheet, PDF - EEWORLD Datasheet

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GS2B: DescriptionRectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AC, SMAJ, 2 PIN; CategoryDiscrete semiconductor diode; File Size118KB，3 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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GS2B Overview

Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AC, SMAJ, 2 PIN

GS2B Parametric

Parameter Name	Attribute value
Maker	Microsemi
Parts packaging code	DO-214AC
package instruction	R-PDSO-C2
Contacts	2
Reach Compliance Code	compliant
ECCN code	EAR99
application	GENERAL PURPOSE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JEDEC-95 code	DO-214AC
JESD-30 code	R-PDSO-C2
JESD-609 code	e0
Maximum non-repetitive peak forward current	50 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Maximum output current	2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	100 V
Maximum reverse recovery time	1.8 µs
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	C BEND
Terminal location	DUAL

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21201 Itasca St.

Chatsworth, CA 91311

Phone: (818) 701-4933

Fax: (818) 701-4939

GS2A

THRU

GS2M

Features

•

For Surface Mount Applications

Extremely Low Thermal Resistance

Easy Pick And Place

High Temp Soldering: 250°C for 10 Seconds At Terminals

2 Amp

Silicon Rectifier

50 to 1000 Volts

DO-214AC

(SMAJ)

H

Maximum Ratings

•

Operating Temperature: -65°C to +175°C

Storage Temperature: -65°C to +175°C

Maximum Thermal Resistance; 15°C/W Junction To Lead

Cathode Band

Microsemi

Part

Number

GS2A

GS2B

GS2D

GS2G

GS2J

GS2K

GS2M

Device

Marking

GS2A

GS2B

GS2D

GS2G

GS2J

GS2K

GS2M

Maximum

Recurrent

Peak Reverse

Voltage

50V

100V

200V

400V

600V

800V

1000V

Maximum

RMS

Voltage

35V

70V

140V

280V

420V

560V

700V

Maximum

DC

Blocking

Voltage

50V

100V

200V

400V

600V

800V

1000V

DIM

A

B

C

D

E

F

G

H

J

A

C

E

F

G

D

B

DIMENSIONS

INCHES

MIN

.078

.081

---

.030

.065

.194

.157

.100

MM

MIN

1.98

2.06

---

.76

1.65

4.93

3.99

2.57

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

I

F(AV)

2.0A

T

J

= 75°C

current

Peak Forward Surge

I

FSM

50A

8.3ms, half sine,

Current

T

J

= 150°C

I

FM

= 2.0A;

Maximum

1.1V

Instantaneous

V

F

T

J

= 25°C*

Forward Voltage

Maximum DC

Reverse Current At

I

R

10µA

T

J

= 25°C

Rated DC Blocking

50µA

T

J

= 125°C

Voltage

I

F

=0.5A, I

R

=1.0A,

Maximum Reverse

T

rr

1.8µs

Recovery Time

I

rr

=0.25A

Typical Junction

C

J

15pF

Measured at

Capacitance

1.0MHz, V

R

=4.0V

*Pulse test: Pulse width 300

µsec,

Duty cycle 2%

MAX

.115

.087

.005

.02

.060

.084

.220

.177

.110

MAX

2.92

2.21

.127

.51

1.52

2.13

5.59

4.50

2.79

NOTE

1

SUGGESTED SOLDER

PAD LAYOUT

0.085”

0.095

0.075”

GS2B Related Products

	GS2B	GS2M	GS2J	GS2A	GS2D	GS2G	GS2K
Description	Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AC, SMAJ, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 2A, 1000V V(RRM), Silicon, DO-214AC, SMAJ, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 2A, 600V V(RRM), Silicon, DO-214AC, SMAJ, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-214AC, SMAJ, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-214AC, SMAJ, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon, DO-214AC, SMAJ, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 2A, 800V V(RRM), Silicon, DO-214AC, SMAJ, 2 PIN
Maker	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi
Parts packaging code	DO-214AC	DO-214AC	DO-214AC	DO-214AC	DO-214AC	DO-214AC	DO-214AC
package instruction	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2
Contacts	2	2	2	2	2	2	2
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V
JEDEC-95 code	DO-214AC	DO-214AC	DO-214AC	DO-214AC	DO-214AC	DO-214AC	DO-214AC
JESD-30 code	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2
JESD-609 code	e0	e0	e0	e0	e0	e0	e0
Maximum non-repetitive peak forward current	50 A	50 A	50 A	50 A	50 A	50 A	50 A
Number of components	1	1	1	1	1	1	1
Phase	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Maximum output current	2 A	2 A	2 A	2 A	2 A	2 A	2 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	100 V	1000 V	600 V	50 V	200 V	400 V	800 V
Maximum reverse recovery time	1.8 µs	1.8 µs	1.8 µs	1.8 µs	1.8 µs	1.8 µs	1.8 µs
surface mount	YES	YES	YES	YES	YES	YES	YES
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	C BEND	C BEND	C BEND	C BEND	C BEND	C BEND	C BEND
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL

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