IRHLUBCN770Z4 datasheet, PDF - EEWORLD Datasheet

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IRHLUBCN770Z4: DescriptionSmall Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SELALED, UBCN-4; CategoryDiscrete semiconductor The transistor; File Size216KB，11 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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IRHLUBCN770Z4 Overview

Small Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SELALED, UBCN-4

IRHLUBCN770Z4 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
package instruction	UBCN-4
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	0.8 A
Maximum drain current (ID)	0.8 A
Maximum drain-source on-resistance	0.68 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-XDSO-N3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.6 W
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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PD-95813H

RADIATION HARDENED

LOGIC LEVEL POWER MOSFET

SURFACE MOUNT (UB)

Product Summary

IRHLUB770Z4

JANSR2N7616UB

60V, N-CHANNEL

REF: MIL-PRF-19500/744

TECHNOLOGY

Part Number

Radiation Level R

DS(on)

QPL Part Number

IRHLUB770Z4 100K Rads (Si)

0.68Ω 0.8A JANSR2N7616UB

IRHLUB730Z4 300K Rads (Si) 0.68Ω 0.8A JANSF2N7616UB

Refer to Page 11 for 3 Additional Part Numbers -

IRHLUBN770Z4, IRHLUBC770Z4, IRHLUBCN770Z4

(SHIELDED METAL LID)

Features

International Rectifier’s R7 Logic Level Power MOSFETs

provide simple solution to interfacing CMOS and TTL control

circuits to power devices in space and other radiation

environments. The threshold voltage remains within acceptable

operating limits over the full operating temperature and post

radiation. This is achieved while maintaining single event

gate rupture and single event burnout immunity.

These devices are used in applications such as current boost

low signal source in PWM, voltage comparator and operational

amplifiers.

5V CMOS and TTL Compatible

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Light Weight

Complimentary P-Channel Available -

IRHLUB7970Z4, IRHLUBN7970Z4

IRHLUBC7970Z4 & IRHLUBCN7970Z4

Absolute Maximum Ratings

Parameter

ID @ VGS = 4.5V, TC = 25°C Continuous Drain Current

ID @ V GS = 4.5V, TC = 100°C Continuous Drain Current

IDM

Pulsed Drain Current

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

T STG

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

For footnotes refer to the last page

0.8

0.5

3.2

0.6

0.005

±10

26.6

0.8

0.06

4.0

-55 to 150

300 (for 5s)

43 (Typical)

Pre-Irradiation

Units

W/°C

V/ns

°C

www.irf.com

11/15/12

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