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CTLDM7181-M832DBK

Description
Power Field-Effect Transistor, 1A I(D), 20V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, CASE TLM832D, 8 PIN
CategoryDiscrete semiconductor    The transistor   
File Size467KB,2 Pages
ManufacturerCentral Semiconductor
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CTLDM7181-M832DBK Overview

Power Field-Effect Transistor, 1A I(D), 20V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, CASE TLM832D, 8 PIN

CTLDM7181-M832DBK Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerCentral Semiconductor
package instructionSMALL OUTLINE, R-PDSO-N8
Contacts8
Manufacturer packaging codeCASE TLM832D
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)1 A
Maximum drain current (ID)1 A
Maximum drain-source on-resistance0.1 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-N8
Humidity sensitivity level1
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)225
Polarity/channel typeN-CHANNEL AND P-CHANNEL
Maximum power dissipation(Abs)1.65 W
Maximum pulsed drain current (IDM)4 A
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
CTLDM7181-M832D
SURFACE MOUNT
N-CHANNEL AND P-CHANNEL
ENHANCEMENT-MODE
COMPLEMENTARY SILICON MOSFETS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CTLDM7181-M832D is a Dual complementary
N-Channel and P-Channel Enhancement-mode
MOSFET, designed for high speed pulsed amplifier
and driver applications. These MOSFETs offer Low
rDS(ON) and Low Threshold Voltages.
MARKING CODE: CFK
TLM832D CASE
APPLICATIONS:
Switching Circuits
DC - DC Converters
Battery powered portable devices
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Drain Current, t<5.0s
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current, tp=10μs
Maximum Pulsed Source Current, tp=10μs
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
ELECTRICAL CHARACTERISTICS:
(TA=25°C)
SYMBOL
TEST CONDITIONS
IGSSF, IGSSR VGS=8.0V, VDS=0
IDSS
VDS=20V, VGS=0
BVDSS
VGS=0, ID=250μA
VGS(th)
VDS=10V, ID=1.0mA
VGS(th)
VDS=VGS, ID=250μA
VSD
VGS=0, IS=1.0A
VSD
VGS=0, IS=360mA
rDS(ON)
VGS=4.5V, ID=0.5A
rDS(ON)
VGS=4.5V, ID=0.95A
rDS(ON)
VGS=2.5V, ID=0.5A
rDS(ON)
VGS=4.5V, ID=0.77A
rDS(ON)
VGS=1.5V, ID=0.1A
rDS(ON)
VGS=2.5V, ID=0.67A
rDS(ON)
VGS=1.8V, ID=0.2A
Qg(tot)
VDS=10V, VGS=4.5V, ID=1.0A
Qgs
VDS=10V, VGS=4.5V, ID=1.0A
Qgd
VDS=10V, VGS=4.5V, ID=1.0A
• Device is
Halogen Free
by design
FEATURES:
Dual complementary MOSFETs
Low rDS(ON)
High current
Logic level compatibility
SYMBOL
VDS
VGS
ID
ID
IS
IDM
ISM
PD
TJ, Tstg
Θ
JA
N-CH (Q1) P-CH (Q2)
20
20
8.0
8.0
1.0
0.86
-
0.95
-
0.36
4.0
4.0
-
4.0
1.65
-65 to +150
76
P-CH (Q2)
MIN TYP MAX
-
.001 .05
-
.005 0.5
20
24
-
-
-
-
0.45 0.76 1.0
-
-
-
-
-
0.9
-
-
-
-
.085 0.15
-
-
-
-
.085 0.142
-
-
-
-
0.13 0.20
-
0.19 0.24
-
3.56
-
-
0.36
-
-
1.52
-
UNITS
V
V
A
A
A
A
A
W
°C
°C/W
N-CH (Q1)
MIN TYP MAX
-
-
10
-
-
10
20
-
-
0.5
-
1.2
-
-
-
-
-
1.1
-
-
-
-
.075 0.10
-
-
-
-
0.10 0.14
-
-
-
-
0.17 0.25
-
-
-
-
-
-
-
2.4
-
-
0.25
-
-
0.65
-
UNITS
μA
μA
V
V
V
V
V
Ω
Ω
Ω
Ω
Ω
Ω
Ω
nC
nC
nC
Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm
2
.
R2 (2-August 2011)

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Description Power Field-Effect Transistor, 1A I(D), 20V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, CASE TLM832D, 8 PIN Transistor Transistor Power Field-Effect Transistor, 1A I(D), 20V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, CASE TLM832D, 8 PIN
Is it Rohs certified? incompatible conform to conform to incompatible
Maker Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor
Reach Compliance Code not_compliant unknown unknown not_compliant
Maximum drain current (Abs) (ID) 1 A 1 A 1 A 1 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Polarity/channel type N-CHANNEL AND P-CHANNEL N-CHANNEL AND P-CHANNEL N-CHANNEL AND P-CHANNEL N-CHANNEL AND P-CHANNEL
Maximum power dissipation(Abs) 1.65 W 1.65 W 1.65 W 1.65 W
surface mount YES YES YES YES

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