CTLDM7181-M832D
SURFACE MOUNT
N-CHANNEL AND P-CHANNEL
ENHANCEMENT-MODE
COMPLEMENTARY SILICON MOSFETS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CTLDM7181-M832D is a Dual complementary
N-Channel and P-Channel Enhancement-mode
MOSFET, designed for high speed pulsed amplifier
and driver applications. These MOSFETs offer Low
rDS(ON) and Low Threshold Voltages.
MARKING CODE: CFK
TLM832D CASE
APPLICATIONS:
•
Switching Circuits
•
DC - DC Converters
•
Battery powered portable devices
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Drain Current, t<5.0s
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current, tp=10μs
Maximum Pulsed Source Current, tp=10μs
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
ELECTRICAL CHARACTERISTICS:
(TA=25°C)
SYMBOL
TEST CONDITIONS
IGSSF, IGSSR VGS=8.0V, VDS=0
IDSS
VDS=20V, VGS=0
BVDSS
VGS=0, ID=250μA
VGS(th)
VDS=10V, ID=1.0mA
VGS(th)
VDS=VGS, ID=250μA
VSD
VGS=0, IS=1.0A
VSD
VGS=0, IS=360mA
rDS(ON)
VGS=4.5V, ID=0.5A
rDS(ON)
VGS=4.5V, ID=0.95A
rDS(ON)
VGS=2.5V, ID=0.5A
rDS(ON)
VGS=4.5V, ID=0.77A
rDS(ON)
VGS=1.5V, ID=0.1A
rDS(ON)
VGS=2.5V, ID=0.67A
rDS(ON)
VGS=1.8V, ID=0.2A
Qg(tot)
VDS=10V, VGS=4.5V, ID=1.0A
Qgs
VDS=10V, VGS=4.5V, ID=1.0A
Qgd
VDS=10V, VGS=4.5V, ID=1.0A
• Device is
Halogen Free
by design
FEATURES:
•
•
•
•
Dual complementary MOSFETs
Low rDS(ON)
High current
Logic level compatibility
SYMBOL
VDS
VGS
ID
ID
IS
IDM
ISM
PD
TJ, Tstg
Θ
JA
N-CH (Q1) P-CH (Q2)
20
20
8.0
8.0
1.0
0.86
-
0.95
-
0.36
4.0
4.0
-
4.0
1.65
-65 to +150
76
P-CH (Q2)
MIN TYP MAX
-
.001 .05
-
.005 0.5
20
24
-
-
-
-
0.45 0.76 1.0
-
-
-
-
-
0.9
-
-
-
-
.085 0.15
-
-
-
-
.085 0.142
-
-
-
-
0.13 0.20
-
0.19 0.24
-
3.56
-
-
0.36
-
-
1.52
-
UNITS
V
V
A
A
A
A
A
W
°C
°C/W
N-CH (Q1)
MIN TYP MAX
-
-
10
-
-
10
20
-
-
0.5
-
1.2
-
-
-
-
-
1.1
-
-
-
-
.075 0.10
-
-
-
-
0.10 0.14
-
-
-
-
0.17 0.25
-
-
-
-
-
-
-
2.4
-
-
0.25
-
-
0.65
-
UNITS
μA
μA
V
V
V
V
V
Ω
Ω
Ω
Ω
Ω
Ω
Ω
nC
nC
nC
Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm
2
.
R2 (2-August 2011)
CTLDM7181-M832D
SURFACE MOUNT
N-CHANNEL AND P-CHANNEL
ENHANCEMENT-MODE
COMPLEMENTARY SILICON MOSFETS
ELECTRICAL CHARACTERISTICS - Continued:
SYMBOL TEST CONDITIONS
gFS
VDS=10V, ID=0.5A
gFS
VDS=10V, ID=810mA
Crss
VDS=10V, VGS=0, f=1.0MHz
Crss
VDS=16V, VGS=0, f=1.0MHz
Ciss
VDS=10V, VGS=0, f=1.0MHz
Ciss
VDS=16V, VGS=0, f=1.0MHz
Coss
VDS=10V, VGS=0, f=1.0MHz
Coss
VDS=16V, VGS=0, f=1.0MHz
ton
VDD=10V, VGS=5.0V, ID=0.5A
ton
VDD=10V, VGS=4.5V, ID=950mA, RG=6.0Ω
toff
VDD=10V, VGS=5.0V, ID=0.5A
toff
VDD=10V, VGS=4.5V, ID=950mA, RG=6.0Ω
N-CH (Q1)
TYP
4.2
-
45
-
220
-
120
-
25
-
140
-
P-CH (Q2)
MIN
TYP
-
-
2.0
-
-
-
-
80
-
-
-
200
-
-
-
60
-
-
-
20
-
-
-
25
UNITS
S
S
pF
pF
pF
pF
pF
pF
ns
ns
ns
ns
TLM832D CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Gate Q1
2) Source Q1
3) Gate Q2
4) Source Q2
5) Drain Q2
6) Drain Q2
7) Drain Q1
8) Drain Q1
MARKING CODE: CFK
R2 (2-August 2011)
w w w. c e n t r a l s e m i . c o m