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IRF6618PBF

Description
Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MT, ISOMETRIC-3
CategoryDiscrete semiconductor    The transistor   
File Size235KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IRF6618PBF Overview

Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MT, ISOMETRIC-3

IRF6618PBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionROHS COMPLIANT, MT, ISOMETRIC-3
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)210 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)29 A
Maximum drain current (ID)30 A
Maximum drain-source on-resistance0.0022 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XBCC-N3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)89 W
Maximum pulsed drain current (IDM)240 A
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 97240A
RoHs Compliant

l
Lead-Free (Qualified up to 260°C Reflow)
l
Application Specific MOSFETs
l
Ideal for CPU Core DC-DC Converters
l
Low Conduction Losses
l
High Cdv/dt Immunity
l
Low Profile (<0.7mm)
l
Dual Sided Cooling Compatible

l
Compatible with existing Surface Mount Techniques

l
DirectFET™ Power MOSFET
‚
V
DSS
Q
g
tot
IRF6618PbF
IRF6618TRPbF
R
DS(on)
Q
gs2
4.0nC
V
GS
Q
gd
15nC
R
DS(on)
Q
oss
28nC
30V max ±20V max 2.2mΩ@ 10V 3.4mΩ@ 4.5V
Q
rr
46nC
V
gs(th)
1.64V
43nC
Applicable DirectFET Package/Layout Pad (see p.7, 8 for details)
MT
MT
DirectFET™ ISOMETRIC
SQ
SX
ST
MQ
MX
Description
The IRF6618PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6618PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF6618PbF has been optimized for
parameters that are critical in synchronous buck converter’s SyncFET sockets.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
E
AS
I
AR
6
Typical RDS(on) (mΩ)
Max.
30
±20
170
30
24
240
210
24
VGS, Gate-to-Source Voltage (V)
Units
V
e
Continuous Drain Current, VGS @ 10V
e
Continuous Drain Current, V @ 10V
f
Pulsed Drain Current
g
Single Pulse Avalanche Energy
h
Avalanche Current
Ãg
Continuous Drain Current, V
GS
@ 10V
GS
Drain-to-Source Voltage
Gate-to-Source Voltage
A
mJ
A
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
10
20
30
40
50
60
ID= 24A
VDS= 24V
VDS= 15V
5
4
3
2
1
0
2
3
4
5
6
7
8
T J = 25°C
T J = 125°C
ID = 30A
9
10
Fig 1.
VGS, Gate -to -Source Voltage (V)
Typical On-Resistance vs. Gate-to-Source Voltage
QG Total Gate Charge (nC)
Fig 2.
Total Gate Charge vs. Gate-to-Source Voltage
www.irf.com
Notes:

Click on this section to link to the appropriate technical paper.
‚
Click on this section to link to the DirectFET Website.
ƒ
Surface mounted on 1 in. square Cu board, steady state.
„
T
C
measured with thermocouple mounted to top (Drain) of part.
…
Repetitive rating; pulse width limited by max. junction temperature.
†
Starting T
J
= 25°C, L = 0.75mH, R
G
= 25Ω, I
AS
= 24A.
1
08/17/07

IRF6618PBF Related Products

IRF6618PBF
Description Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MT, ISOMETRIC-3
Is it Rohs certified? conform to
Maker Infineon
package instruction ROHS COMPLIANT, MT, ISOMETRIC-3
Reach Compliance Code compliant
ECCN code EAR99
Avalanche Energy Efficiency Rating (Eas) 210 mJ
Shell connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V
Maximum drain current (Abs) (ID) 29 A
Maximum drain current (ID) 30 A
Maximum drain-source on-resistance 0.0022 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-XBCC-N3
Number of components 1
Number of terminals 3
Operating mode ENHANCEMENT MODE
Maximum operating temperature 150 °C
Package body material UNSPECIFIED
Package shape RECTANGULAR
Package form CHIP CARRIER
Peak Reflow Temperature (Celsius) 260
Polarity/channel type N-CHANNEL
Maximum power dissipation(Abs) 89 W
Maximum pulsed drain current (IDM) 240 A
Certification status Not Qualified
surface mount YES
Terminal form NO LEAD
Terminal location BOTTOM
Maximum time at peak reflow temperature 40
transistor applications SWITCHING
Transistor component materials SILICON
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