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IRHN7054D

Description
Power Field-Effect Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size241KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

IRHN7054D Overview

Power Field-Effect Transistor,

IRHN7054D Parametric

Parameter NameAttribute value
MakerInfineon
Reach Compliance Codecompliant
PD-90884E
IRHN7054
JANSR2N7394U
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-1)
Product Summary
Part Number
IRHN7054
IRHN3054
IRHN4054
IRHN8054
Radiation Level
100 kRads(Si)
300 kRads(Si)
500 kRads(Si)
1000 kRads(Si)
RDS(on)
0.027
0.027
0.027
0.040
I
D
35A
35A
35A
35A
QPL Part Number
JANSR2N7394U
JANSF2N7394U
JANSG2N7394U
JANSH2N7394U
60V, N-CHANNEL
REF: MIL-PRF-19500/603
RAD-Hard HEXFET TECHNOLOGY
SMD-1
Description
IR HiRel RAD-Hard HEXFET technology provides high performance
power MOSFETs for space applications. This technology
has over a decade of proven performance and reliability in
satellite applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low Rdson and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain all
of the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic package
Light Weight
Surface Mount
ESD Rating: Class 3A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
I
D
@ V
GS
= 12V, T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
For Footnotes, refer to the page 2.
1
300 (5 sec)
2.6 (Typical)
35
30
140
150
1.2
± 20
500
35
15
3.5
-55 to + 150
I
D
@ V
GS
= 12V, T
C
= 100°C Continuous Drain Current
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
2016-06-30

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