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COM350A

Description
Power Field-Effect Transistor, 13A I(D), 400V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size42KB,4 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

COM350A Overview

Power Field-Effect Transistor, 13A I(D), 400V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN

COM350A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
package instructionHERMETIC SEALED, METAL, TO-254AA, 3 PIN
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage400 V
Maximum drain current (Abs) (ID)13 A
Maximum drain current (ID)13 A
Maximum drain-source on-resistance0.32 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeS-MSFM-P3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
Maximum pulsed drain current (IDM)54 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
COM150A COM350A
COM250A COM450A
(COTS) COMMERCIAL OFF-THE-SHELF
POWER MOSFET IN A TO-254AA PA C K A G E
100V Thru 500V, Up To 25 Amp, N-Channel
MOSFET In Hermetic Metal Package
FEATURES
Isolated Hermetic Metal Package
Fast Switching
Low R
DS(on)
Standard Off-The-Shelf
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications
such as switching power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
MAXIMUM RATINGS
@
PART NUMBER
COM150A
COM250A
COM350A
COM450A
25
°
C
V
D S
100 V
200 V
400 V
500 V
R
DS(on)
.070
.100
.32
.42
I
D
25 A
20 A
12 A
10 A
31
.
S C H E M ATIC
P O W E R R ATING
8 09 R0
31 - 1
.

COM350A Related Products

COM350A COM450A COM150A COM250A
Description Power Field-Effect Transistor, 13A I(D), 400V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN Power Field-Effect Transistor, 11A I(D), 500V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN Power Field-Effect Transistor, 25A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN Power Field-Effect Transistor, 25A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
Is it Rohs certified? incompatible incompatible incompatible incompatible
package instruction HERMETIC SEALED, METAL, TO-254AA, 3 PIN HERMETIC SEALED, METAL, TO-254AA, 3 PIN HERMETIC SEALED, METAL, TO-254AA, 3 PIN HERMETIC SEALED, METAL, TO-254AA, 3 PIN
Reach Compliance Code unknown compliant unknown unknown
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 400 V 500 V 100 V 200 V
Maximum drain current (Abs) (ID) 13 A 11 A 25 A 25 A
Maximum drain current (ID) 13 A 11 A 25 A 25 A
Maximum drain-source on-resistance 0.32 Ω 0.42 Ω 0.07 Ω 0.1 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-254AA TO-254AA TO-254AA TO-254AA
JESD-30 code S-MSFM-P3 S-MSFM-P3 S-MSFM-P3 S-MSFM-P3
JESD-609 code e0 e0 e0 e0
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material METAL METAL METAL METAL
Package shape SQUARE SQUARE SQUARE SQUARE
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 125 W 125 W 125 W 125 W
Maximum pulsed drain current (IDM) 54 A 40 A 100 A 80 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
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