IRFN340-JQR-BR4 datasheet, PDF

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IRFN340-JQR-BR4: Description7.5A, 400V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, TO-220SM, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size19KB，2 Pages; ManufacturerSEMELAB; Environmental Compliance

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IRFN340-JQR-BR4 Overview

7.5A, 400V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, TO-220SM, 3 PIN

IRFN340-JQR-BR4 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SEMELAB
Parts packaging code	TO-220SM
package instruction	CHIP CARRIER, R-CBCC-N3
Contacts	3
Reach Compliance Code	compliant
Configuration	SINGLE
Minimum drain-source breakdown voltage	400 V
Maximum drain current (ID)	7.5 A
Maximum drain-source on-resistance	0.7 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CBCC-N3
JESD-609 code	e4
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	GOLD
Terminal form	NO LEAD
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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IRFN340

MECHANICAL DATA

Dimensions in mm (inches)

N–CHANNEL

POWER MOSFET

BV

DSS

I

D(cont)

R

DS(on)

FEATURES

11.5

2.0

3.5

3.0

0.25

400V

10A

0.55

W

4.6

15.8

1.5

1

3

• HERMETICALLY SEALED SURFACE

MOUNT PACKAGE

• SMALL FOOTPRINT – EFFICIENT USE OF

PCB SPACE.

• SIMPLE DRIVE REQUIREMENTS

• LIGHTWEIGHT

• HIGH PACKING DENSITIES

Note:

IRFxxxSM also available with

pins 1 and 3 reversed.

±20V

10A

6A

40A

125W

1.0W/°C

650mJ

10A

12.5mJ

4.0V/ns

–55 to 150°C

300°C

1.0°C/W

TBD

9.0

2

8.5

TO–220SM – Surface Mount Package

Pad 1 – Source

Pad 2 – Drain

Pad 3 – Gate

ABSOLUTE MAXIMUM RATINGS

(T

case

= 25°C unless otherwise stated)

V

GS

I

D

I

D

I

DM

P

D

E

AS

I

AR

E

AR

dv/dt

T

J

, T

stg

T

L

R

q

JC

R

q

J–PCB

Notes

1)

2)

3)

4)

Gate – Source Voltage

Continuous Drain Current

(V

GS

= 0 , T

case

= 25°C)

Continuous Drain Current

(V

GS

= 0 , T

case

= 100°C)

Pulsed Drain Current

1

Power Dissipation @ T

case

= 25°C

Linear Derating Factor

Single Pulse Avalanche Energy

2

Avalanche Energy

1

Repetitive Avalanche Energy

1

Peak Diode Recovery

3

Operating and Storage Temperature Range

Package Mounting Surface Temperature (for 5 sec)

Thermal Resistance Junction to Case

Thermal Resistance Junction to PCB (Typical)

Repetitive Rating – Pulse width limited by maximum junction temperature.

@ V

DD

= 50V,Starting T

J

= 25°C, E

AS

=[0.5 * L* (I

L2

) * [BV

DSS

/(BV

DSS

-V

DD

)], Peak I

L

= 10A V

GS

= 10V,

25

£

R

G

£

200

W

I

SD

£

10A , di/dt

£

120A/

m

s , V

DD

£

BV

DSS

, T

J

£

150°C

Pulse Test: Pulse Width

£

300ms,

d £

2%

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

Website:

http://www.semelab.co.uk

E-mail:

sales@semelab.co.uk

Prelim. 10/99

Semelab plc.

IRFN340-JQR-BR4 Related Products

	IRFN340-JQR-BR4	IRFN340R4	IRFN340	IRFN340-JQR-B
Description	7.5A, 400V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, TO-220SM, 3 PIN	7.5A, 400V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, TO-220SM, 3 PIN	7.5A, 400V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, TO-220SM, 3 PIN	7.5A, 400V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, TO-220SM, 3 PIN
Is it lead-free?	Lead free	Lead free	Contains lead	Contains lead
Is it Rohs certified?	conform to	conform to	incompatible	incompatible
Maker	SEMELAB	SEMELAB	SEMELAB	SEMELAB
Parts packaging code	TO-220SM	TO-220SM	TO-220SM	TO-220SM
package instruction	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3
Contacts	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	400 V	400 V	400 V	400 V
Maximum drain current (ID)	7.5 A	7.5 A	7.5 A	7.5 A
Maximum drain-source on-resistance	0.7 Ω	0.7 Ω	0.7 Ω	0.7 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CBCC-N3	R-CBCC-N3	R-CBCC-N3	R-CBCC-N3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON

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