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934056779118

Description
TRANSISTOR 75 A, 25 V, 0.00245 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size288KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

934056779118 Overview

TRANSISTOR 75 A, 25 V, 0.00245 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power

934056779118 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)500 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage25 V
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.00245 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)400 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PSMN002-25P; PSMN002-25B
N-channel enhancement mode field-effect transistor
Rev. 01 — 22 October 2001
Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS™
1
technology.
Product availability:
PSMN002-25P in SOT78 (TO-220AB)
PSMN002-25B in SOT404 (D
2
-PAK)
2. Features
s
Low on-state resistance
s
Fast switching.
3. Applications
s
High frequency computer motherboard DC to DC converters
s
OR-ing applications.
4. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT78 and SOT404, simplified outline and symbol
Description
gate (g)
drain (d)
source (s)
drain (d)
g
s
Simplified outline
[1]
mb
mb
Symbol
d
MBB076
2
1
MBK106
3
MBK116
1 2 3
SOT78 (TO-220AB)
[1]
SOT404 (D
2-
PAK)
It is not possible to make connection to pin 2 of the SOT404 package.
1.
TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.

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934056779118 PSMN002-25B118 PSMN002-25P,127 PSMN002-25B,118 PSMN002-25B PSMN002-25P 934056778127
Description TRANSISTOR 75 A, 25 V, 0.00245 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power MOSFET TAPE13 PWR-MOS MOSFET RAIL PWR-MOS PSMN002-25B 75A, 25V, 0.0029ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3 75A, 25V, 0.0029ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN 75A, 25V, 0.00245ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN
Configuration SINGLE WITH BUILT-IN DIODE Single SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Is it Rohs certified? conform to - - - conform to conform to conform to
Maker NXP - NXP NXP NXP NXP NXP
package instruction SMALL OUTLINE, R-PSSO-G2 - PLASTIC, SC-46, 3 PIN SMALL OUTLINE, R-PSSO-G2 PLASTIC, D2PAK-3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 - 3 3 3 3 3
Reach Compliance Code unknown - compliant unknown unknown unknown unknown
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 500 mJ - 500 mJ 500 mJ 500 mJ 500 mJ 500 mJ
Shell connection DRAIN - DRAIN DRAIN DRAIN DRAIN DRAIN
Minimum drain-source breakdown voltage 25 V - 25 V 25 V 25 V 25 V 25 V
Maximum drain current (ID) 75 A - 75 A 75 A 75 A 75 A 75 A
Maximum drain-source on-resistance 0.00245 Ω - 0.0029 Ω 0.0029 Ω 0.0029 Ω 0.0029 Ω 0.00245 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 - R-PSFM-T3 R-PSSO-G2 R-PSSO-G2 R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 - e3 e3 e3 e3 e3
Number of components 1 - 1 1 1 1 1
Number of terminals 2 - 3 2 2 3 3
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C - 175 °C 175 °C - - 175 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - FLANGE MOUNT SMALL OUTLINE SMALL OUTLINE FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 400 A - 400 A 400 A 400 A 400 A 400 A
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES - NO YES YES NO NO
Terminal surface TIN - TIN TIN Tin (Sn) Tin (Sn) TIN
Terminal form GULL WING - THROUGH-HOLE GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON SILICON SILICON SILICON
Is Samacsys - - N N N N -
Base Number Matches - - 1 1 1 1 -
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