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PBSS8110Y
100 V, 1 A NPN low V
CEsat
(BISS) transistor
Rev. 02 — 21 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN low V
CEsat
transistor in a SOT363 (SC-88) plastic package.
1.2 Features
SOT363 package
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High efficiency reduces heat generation
1.3 Applications
Major application segments:
Automotive 42 V power
Telecom infrastructure
Industrial
Peripheral driver:
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver (e.g. relays, buzzers and motors)
DC-to-DC converter
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
R
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
Conditions
Min
-
-
-
-
Typ
-
-
-
-
Max
100
1
3
200
Unit
V
A
A
mΩ
NXP Semiconductors
PBSS8110Y
100 V, 1 A NPN low V
CEsat
(BISS) transistor
2. Pinning information
Table 2.
Pin
1, 2, 5, 6
3
4
Discrete pinning
Description
collector
base
emitter
6
5
4
3
4
1
2
3
sym014
Simplified outline
Symbol
1, 2, 5, 6
3. Ordering information
Table 3.
Ordering information
Package
Name
PBSS8110Y
-
Description
plastic surface mounted package; 6 leads
Version
SOT363
Type number
4. Marking
Table 4.
Marking
Marking code
[1]
81*
Type number
PPBSS8110Y
[1]
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
peak collector current
continuous collector current
continuous base current
total power dissipation
T
amb
≤
25
°C
[1]
[2]
[3]
Conditions
open emitter
open base
open collector
T
j(max)
Min
-
-
-
-
-
-
-
-
-
Max
120
100
5
3
1
0.3
290
480
625
Unit
V
V
V
A
A
A
mW
mW
mW
PBSS8110Y_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 November 2009
2 of 13
NXP Semiconductors
PBSS8110Y
100 V, 1 A NPN low V
CEsat
(BISS) transistor
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
T
j
T
amb
T
stg
[1]
[2]
[3]
Parameter
junction temperature
operating ambient
temperature
storage temperature
Conditions
Min
-
−65
Max
150
+150
+150
Unit
°C
°C
°C
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1cm
2
collector mounting
pad.
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6cm
2
collector mounting
pad.
600
P
tot
(mW)
(1)
001aaa796
400
(2)
200
0
0
40
80
120
160
T
amb
(°C)
(1) 1cm
2
collector mounting pad
(2) Standard footprint
Fig 1.
Power derating curves
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
Conditions
in free air
[1]
[2]
[3]
Typ
431
260
200
85
Unit
K/W
K/W
K/W
K/W
R
th(j-s)
[1]
[2]
[3]
PBSS8110Y_2
thermal resistance from junction
to soldering point
in free air
[1]
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1cm
2
collector mounting
pad.
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6cm
2
collector mounting
pad.
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 November 2009
3 of 13
NXP Semiconductors
PBSS8110Y
100 V, 1 A NPN low V
CEsat
(BISS) transistor
10
3
Z
th
(K/W)
10
2
(1)
(2)
(3)
(4)
(5)
(6)
(7)
001aaa798
10
(8)
(9)
(10)
1
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
Mounted on FR4 PCB; standard footprint
(1)
δ
= 1
(2)
δ
= 0.75
(3)
δ
= 0.5
(4)
δ
= 0.33
(5)
δ
= 0.2
(6)
δ
= 0.1
(7)
δ
= 0.05
(8)
δ
= 0.02
(9)
δ
= 0.01
(10)
δ
= 0
Fig 2.
Transient thermal impedance as a function of pulse time; typical values
PBSS8110Y_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 November 2009
4 of 13
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