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KSE13005FH2

Description
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size51KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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KSE13005FH2 Overview

Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN

KSE13005FH2 Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeTO-220F
package instructionTO-220F, 3 PIN
Contacts3
Reach Compliance Codeunknown
Shell connectionISOLATED
Maximum collector current (IC)4 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)8
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)4 MHz
KSE13005F
KSE13005F
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
1
TO-220F
2.Collector
3.Emitter
1.Base
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
700
400
9
4
8
2
30
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CEO
I
EBO
h
FE
V
CE
(sat)
Parameter
Collector-Base Breakdown Voltage
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
Test Condition
I
C
= 10mA, I
B
= 0
V
EB
= 9V, I
C
= 0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 2A
I
C
= 1A, I
B
= 0.2A
I
C
= 2A, I
B
= 0.5A
I
C
= 4A, I
B
= 1A
I
C
= 1A, I
B
= 0.2A
I
C
= 2A, I
B
= 0.5A
V
CB
= 10V , f = 0.1MHz
V
CE
= 10V, I
C
= 0.5A
V
CC
=125V, I
C
= 2A
I
B1
= - I
B2
= 0.4A
R
L
= 125Ω
4
0.8
4
0.9
65
10
8
Min.
400
Typ.
Max.
1
60
40
0.5
0.6
1
1.2
1.6
V
V
V
V
V
pF
MHz
µs
µs
µs
Units
V
mA
V
BE
(sat)
C
ob
f
T
t
ON
t
STG
t
F
*Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
* Pulse test: PW≤300µs, Duty Cycle≤2%
©2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001

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Description Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
Maker Fairchild Fairchild Fairchild Fairchild
Parts packaging code TO-220F TO-220F TO-220F TO-220F
package instruction TO-220F, 3 PIN TO-220F, 3 PIN TO-220F, 3 PIN TO-220F, 3 PIN
Contacts 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 4 A 4 A 4 A 4 A
Collector-emitter maximum voltage 400 V 400 V 400 V 400 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 8 8 8 8
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 4 MHz 4 MHz 4 MHz 4 MHz
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