PBHV8540T
500 V, 0.5 A NPN high-voltage low V
CEsat
(BISS) transistor
Rev. 02 — 14 January 2009
Product data sheet
1. Product profile
1.1 General description
NPN high-voltage low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a
SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9040T.
1.2 Features
I
I
I
I
I
High voltage
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain (h
FE
) at high I
C
AEC-Q101 qualified
1.3 Applications
I
I
I
I
I
I
I
Electronic ballast for fluorescent lighting
LED driver for LED chain module
LCD backlighting
High Intensity Discharge (HID) front lighting
Automotive motor management
Hook switch for wired telecom
Switch mode power supply
1.4 Quick reference data
Table 1.
Symbol
V
CESM
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter peak
voltage
collector-emitter voltage
collector current
DC current gain
V
CE
= 10 V;
I
C
= 50 mA
Conditions
V
BE
= 0 V
open base
Min
-
-
-
100
Typ
-
-
-
200
Max
500
400
0.5
-
Unit
V
V
A
NXP Semiconductors
PBHV8540T
500 V, 0.5 A NPN high-voltage low V
CEsat
(BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
base
emitter
collector
1
2
2
sym021
Simplified outline
3
Graphic symbol
3
1
3. Ordering information
Table 3.
Ordering information
Package
Name
PBHV8540T
-
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
W4*
Type number
PBHV8540T
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PBHV8540T_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 14 January 2009
2 of 12
NXP Semiconductors
PBHV8540T
500 V, 0.5 A NPN high-voltage low V
CEsat
(BISS) transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
CESM
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
amb
T
stg
[1]
Parameter
collector-base voltage
collector-emitter voltage
collector-emitter peak
voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
open emitter
open base
V
BE
= 0 V
open collector
single pulse;
t
p
≤
1 ms
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1]
Min
-
-
-
-
-
-
-
-
-
−55
−65
Max
500
400
500
6
0.5
1
200
300
150
+150
+150
Unit
V
V
V
V
A
A
mA
mW
°C
°C
°C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
400
P
tot
(mW)
300
006aab150
200
100
0
−75
−25
25
75
125
175
T
amb
(°C)
FR4 PCB, standard footprint
Fig 1.
Power derating curve
PBHV8540T_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 14 January 2009
3 of 12
NXP Semiconductors
PBHV8540T
500 V, 0.5 A NPN high-voltage low V
CEsat
(BISS) transistor
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
Min
-
-
Typ
-
-
Max
417
70
Unit
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
006aab151
1
0
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBHV8540T_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 14 January 2009
4 of 12
NXP Semiconductors
PBHV8540T
500 V, 0.5 A NPN high-voltage low V
CEsat
(BISS) transistor
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
Parameter
collector-base cut-off
current
Conditions
V
CB
= 320 V; I
E
= 0 A
V
CB
= 320 V; I
E
= 0 A;
T
j
= 150
°C
Min
-
-
-
-
Typ
-
-
-
-
Max
100
10
100
100
Unit
nA
µA
nA
nA
I
CES
I
EBO
h
FE
collector-emitter cut-off V
CE
= 320 V; I
C
= 0 A
current
emitter-base cut-off
current
DC current gain
V
EB
= 4 V; I
C
= 0 A
V
CE
= 10 V
I
C
= 50 mA
I
C
= 100 mA
I
C
= 300 mA
[1]
100
80
10
-
-
-
[1]
200
150
20
100
60
135
0.91
30
4
165
50
6200
6250
800
2200
3000
-
-
-
200
90
250
1.1
-
-
-
-
-
-
-
-
-
mV
mV
mV
V
MHz
pF
pF
ns
ns
ns
ns
ns
ns
V
CEsat
collector-emitter
saturation voltage
I
C
= 100 mA; I
B
= 10 mA
I
C
= 100 mA; I
B
= 20 mA
I
C
= 300 mA; I
B
= 60 mA
V
BEsat
f
T
C
c
C
e
t
d
t
r
t
on
t
s
t
f
t
off
[1]
base-emitter saturation I
C
= 300 mA; I
B
= 60 mA
voltage
transition frequency
collector capacitance
emitter capacitance
delay time
rise time
turn-on time
storage time
fall time
turn-off time
V
CE
= 10 V; I
C
= 100 mA;
f = 100 MHz
V
CB
= 20 V; I
E
= i
e
= 0 A;
f = 1 MHz
V
EB
= 0.5 V; I
C
= i
c
= 0 A;
f = 1 MHz
V
CC
= 6 V; I
C
= 0.5 A;
I
Bon
= 0.1 A; I
Boff
=
−0.1
A
-
-
-
-
-
-
-
-
-
-
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
PBHV8540T_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 14 January 2009
5 of 12
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