VISHAY
SMF5.0A to SMF51A
Vishay Semiconductors
Surface Mount ESD Protection Diodes
\
Features
•
•
•
•
For surface mounted applications
Low-profile package
Optimized for LAN protection applications
Ideal for ESD protection of data lines in
accordance with IEC 1000-4-2 (IEC801-2)
• Ideal for EFT protection of data lines in
accordance with IEC 1000-4-4 (IEC801-4)
• IEC 1000-4-2 (ESD) 15 kV (air) 8 kV (contact)
IEC 1000-4-4 (EFT) 40 A (tp = 5/ 50 ns)
IEC 1000-4-5 (Lightning) 24 A (tp = 8/ 20
µs)
• Low incremental surge resistance, excellent
clamping capability
• 200 W peak pulse power capability with a
10/1000
µs
waveform, repetition rate
(duty cycle): 0.01 %
• Very fast response time
• High temperature soldering guaranteed:
260 °C/ 10 seconds at terminals
17249
Mechanical Data
Case:
JEDEC DO-219-AB (SMF) Plastic case
Terminals:
Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity:The
band denotes the cathode, which is
positive with respect to the anode under normal
TVS operation
Mounting Position:
Any
Weight:
approx. 0.00035 oz, 0.01g
Packaging Codes/Options:
G1/10 K per 13 " reel (8 mm tape), 50 K/box
G2/3 K per 7 " reel (8 mm tape), 30 K/box
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Peak pulse power dissipation
Test condition
10/1000
µs
waveform
1)
8/20
µs
waveform
1)
Peak pulse current
Peak forward surge current
1)
Symbol
P
PPM
P
PPM
I
PPM
I
FSM
Value
200
1000
next
Table
20
Unit
W
W
A
A
10/1000
µs
waveform
1)
8.3 ms single half sine-wave
Non-repetitive current pulse and derated above T
A
= 25 °C
Maximum Thermal Resistance
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Thermal resistance
2)
Symbol
R
thJA
T
stg
, T
J
Value
180
- 55 to + 150
Unit
K/W
°C
Operation junction and storage
temperature range
2)
Mounted on epoxy substrate with 3 x 3 mm, cu pads (≥ 40
µm
thick)
Document Number 85811
Rev. 4, 17-Mar-03
www.vishay.com
1
SMF5.0A to SMF51A
Vishay Semiconductors
Electrical Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified. V
F
= 3.5 V at I
F
= 12 A (uni-directional only)
Partnumber
Marking
Code
UNI
Breakdown
Voltage
1)
VISHAY
Test Current
Stand-off
Voltage
Maximum
Reverse
Leakage
@ V
WM
I
D
µA
400
400
250
100
50
25
10
5.0
2.5
2.5
2.5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Peak Pulse
Surge
Current
2,3)
I
PPM
A
21.7
19.4
17.9
16.7
15.5
14.7
13.9
13.5
11.8
11.0
10.1
9.3
8.6
8.2
7.7
7.2
5.8
6.2
5.6
5.1
4.8
4.4
4.1
3.8
3.4
3.1
2.9
2.8
2.6
2.4
Maximum
Clamping
Voltage
@ I
PPM
V
C
V
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
V
(BR)
V
min
SMF5.0A
SMF6.0A
SMF6.5A
SMF7.0A
SMF7.5A
SMF8.0A
SMF8.5A
SMF9.0A
SMF10A
SMF11A
SMF12A
SMF13A
SMF14A
SMF15A
SMF16A
SMF17A
SMF18A
SMF20A
SMF22A
SMF24A
SMF26A
SMF28A
SMF30A
SMF33A
SMF36A
SMF40A
SMF43A
SMF45A
SMF48A
SMF51A
1)
2)
3)
@ I
T
mA
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
V
WM
V
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
AE
AG
AK
AM
AP
AR
AT
AV
AX
AZ
BE
BG
BK
BM
BP
BR
BT
BV
BX
BZ
CE
CG
CK
CM
CP
CR
CT
CV
CX
CZ
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
Pulse test t
p
≤
5.0 ms
Surge current waveform 10/1000
µs
All terms and symbols are consistent with ANSI/IEEE C62.35
www.vishay.com
2
Document Number 85811
Rev. 4, 17-Mar-03
VISHAY
SMF5.0A to SMF51A
Vishay Semiconductors
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
10
Non-repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25 °C
P
PPM
- Peak Pulse Power (kW)
1
0.1
0.1µs
17250
1.0µs
10µs
100µs
1.0ms
10ms
t
d
- Pulse Width (sec.)
Figure 1. Peak Pulse Power Rating
Peak Pulse Power (P
PP
) or Current (I
PPM
)
Derating in Percentage, %
100
75
50
25
0
0
25
50
75
100
125
150
175
200
17251
T
A
- Ambient Temperature (°C)
Figure 2. Pulse Derating Curve
150
I
PPM
- Peak Pulse Current, % I
RSM
tr = 10
µs
Peak Value
I
PPM
100
T
J
= 25 °C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
Half Value - IPP
2
I
PPM
50
10/1000 sec. Waveform
as defined by R.E.A.
td
0
0
1.0
2.0
3.0
4.0
17252
t - Time (ms)
Figure 3. Pulse Waveform
Document Number 85811
Rev. 4, 17-Mar-03
www.vishay.com
3
SMF5.0A to SMF51A
Vishay Semiconductors
Package Dimensions in mm
Cathode Band
T op View
VISHAY
1.8
±
0.1
1.0
±
0.2
5
0.98
±
0.1
2.8
±
0.1
0.05 - 0.30
5
Detail
Z
enlarged
Z
0.60
±
0.25
0.00 - 0.10
3.7
±
0.2
17247
Mounting Pad Layout
1.6
1.2
1.2
17248
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4
Document Number 85811
Rev. 4, 17-Mar-03
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
SMF5.0A to SMF51A
Vishay Semiconductors
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85811
Rev. 4, 17-Mar-03
www.vishay.com
5
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