RF Small Signal Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, SOT-23, 3 PIN
| Parameter Name | Attribute value |
| Maker | SAMSUNG |
| Parts packaging code | SOT-23 |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Collector-based maximum capacity | 0.7 pF |
| Collector-emitter maximum voltage | 25 V |
| Configuration | SINGLE |
| highest frequency band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 code | R-PDSO-G3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 650 MHz |
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