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P4SMA530A-E

Description
Trans Voltage Suppressor Diode, 400W, 451V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size1MB,5 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Download Datasheet Parametric View All

P4SMA530A-E Overview

Trans Voltage Suppressor Diode, 400W, 451V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN

P4SMA530A-E Parametric

Parameter NameAttribute value
MakerLittelfuse
package instructionR-PDSO-C2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresEXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage556.5 V
Minimum breakdown voltage503.5 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak reverse power dissipation400 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation3.3 W
GuidelineIEC-61000-4-2; IEC-61000-4-4
Maximum repetitive peak reverse voltage451 V
surface mountYES
technologyAVALANCHE
Terminal formC BEND
Terminal locationDUAL
Surface Mount – 400W > P4SMA-E Series
P4SMA series
TVS Diodes
P4SMA-E Series
Uni-directional
Description
RoHS
Pb
e3
The P4SMA-E series is designed specifically to protect
sensitive electronic equipment from voltage transients
induced by lightning and other transient voltage events.
Features
• Excellent clamping
capability
• or surface mounted
F
applications to optimize
board space
• ow profile package
L
• ypical failure mode is
T
short from over-specified
voltage or current
• hisker test is conducted
W
based on JEDEC
JESD201A per its table 4a
and 4c
• EC-61000-4-2 ESD
I
30kV(Air), 30kV (Contact)
• SD protection of data
E
lines in accordance with
IEC 61000-4-2
• FT protection of data
E
lines in accordance with
IEC 61000-4-4
• uilt-in strain relief
B
• 400W peak pulse power
capability at 10/1000µs
waveform, repetition rate
(duty cycles):0.01%
• Low incremental surge
resistance
• Fast response time:
typically less than 1.0ps
from 0V to BV min
• igh temperature
H
to reflow soldering
guaranteed: 260°C/40sec
BR
@ T
J
= V
BR
@25°C
V
x (1+
α
T x (T
J
- 25))
(
α
T:Temperature
Coefficient, typical value is
0.1%)
• PI silicon technology
E
• eet MSL level1, per
M
J-STD-020C, LF maximun
peak of 260
°
C
• Matte tin lead–free Plated
• Halogen-free and RoHS
compliant
• Pb-free E3 means 2nd
level interconnect is
Pb-free and the terminal
finish material is tin(Sn)
(IPC/JEDEC J-STD-
609A.01)
Maximum Ratings and Thermal Characteristics
(T
A
=25
O
C unless otherwise noted)
Parameter
Peak Pulse Power Dissipation at
T
A
=25ºC by 10/1000µs Waveform
(Fig.2)(Note 1), (Note 2)
Power Dissipation on Infinite Heat
Sink at T
L
=50
O
C
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave (Note 3)
Maximum Instantaneous Forward
Voltage at 25A for Unidirectional
Only
Operating Temperature Range
Storage Temperature Range
Typical Thermal Resistance Junction
to Lead
Typical Thermal Resistance Junction
to Ambient
Symbol
P
PPM
P
D
I
FSM
V
F
T
J
T
STG
R
θJL
R
θJA
Value
400
3.3
60
3.5
-65 to 150
-65 to 175
30
120
Unit
W
W
A
V
°C
°C
°C/W
°C/W
Notes:
1. Non-repetitive current pulse, per Fig.4 and derated above T
J
(initial) =25ºC per Fig. 3.
2. Mounted on 5.0x5.0mm copper pad to each terminal.
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional
device only.
Functional Diagram
Cathode
Bi-directional
Applications
TVS devices are ideal for the protection of I/O Interfaces,
V
CC
bus and other vulnerable circuits used in Telecom,
Computer, Industrial and Consumer electronic applications.
Anode
Uni-directional
©2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/29/16
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