P4SMA16A datasheet, PDF - EEWORLD Datasheet

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P4SMA16A: DescriptionTrans Voltage Suppressor Diode, 13.6V V(RWM), Unidirectional; CategoryDiscrete semiconductor diode; File Size687KB，3 Pages; ManufacturerGood-Ark; Environmental Compliance; Suzhou Gotech is a complete and comprehensive manufacturer of design, manufacturing, packaging and sales in the domestic semiconductor discrete device diode industry. From the independent development of front-end chips to various packaging technologies of back-end finished products, it has formed a complete industrial chain. The main products include leadless integrated circuit products and discrete device products with the latest packaging technology, automotive rectifier diodes, power modules, rectifier diode chips, silicon rectifier diodes, switching diodes, Zener diodes, micro bridge piles, military fuses, photovoltaic bypass modules, etc., with a total of more than 50 series and more than 1,500 varieties. The products are widely used in many fields such as aerospace, automobiles, green lighting, IT, household appliances and power supply devices for large equipment. Design and develop silver paste for solar cells and various electronic pastes, and develop and mass produce various new sensors in the field of the Internet of Things.

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P4SMA16A Overview

Trans Voltage Suppressor Diode, 13.6V V(RWM), Unidirectional

P4SMA16A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Good-Ark
Reach Compliance Code	compliant
Breakdown voltage nominal value	16 V
Maximum clamping voltage	22.5 V
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
polarity	UNIDIRECTIONAL
Maximum repetitive peak reverse voltage	13.6 V
surface mount	YES

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P4SMA6.8A thru P4SMA220CA

Surface Mount Transient Voltage Suppressors

Peak Pulse Power 400W Breakdown Voltage 6.8 to 220V

Features

Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

Optimized for LAN protection applications

Ideal for ESD protection of data lines in accordance with

IEC 1000-4-2 (IEC801-2)

Ideal for EFT protection of data lines in accordance with

IEC1000-4-4 (IEC801-4)

Low profile package with built-in strain relief for surface

mounted applications

Glass passivated junction

Low incremental surge resistance, excellent clamping capability

400W peak pulse power capability with a 10/1000us wave-

form, repetition rate (duty cycle): 0.01% (300W above 91V)

Very Fast response time

High temperature soldering guaranteed: 250

C/10 seconds

at terminals

Mechanical Data

Case: JEDEC DO-214AC molded plastic over passivated chip

Terminals: Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity: For uni-directional types the band denotes the cathode,

which is positive with respect to the anode under normal TVS

operation

Mounting Position: Any

Weight: 0.002oz., 0.064g

Devices for Bidirectional Applications

For bi-directional devices, use suffix CA (e.g. P4SMA10CA). Electrical characteristics apply in both directions.

Maximum Ratings and Characteristics

=25

C unless otherwise noted)

Parameter

Peak pulse power dissipation with a 10/1000

s waveform

(1)(2)

(Fig. 1)

Peak pulse current with a 10/1000

s waveform

(1)

(Fig. 3)

Power dissipation on infinite heatsink, T

=50

Peak forward surge current, 8.3ms single half sine-wave

uni-directional only

(2)

Thermal resistance junction to ambient air

(3)

Thermal resistance junction to leads

Operating junction and storage temperature range

Symbol

PPM

M(AV)

FSM

, T

STG

Value

400

See Next Table

1.0

120

-65 to +150

Unit

C/W

Notes:

1. Non-repetitive current pulse, per Fig. 3 and derated above T

=25

C per Fig. 2. Rating is 300W above 91V.

2. Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal

3. Mounted on minimum recommended pad layout

527

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