Transistor
| Parameter Name | Attribute value |
| Maker | CDIL[Continental Device India Pvt. Ltd.] |
| package instruction | , |
| Reach Compliance Code | compliant |
| Maximum collector current (IC) | 0.5 A |
| Configuration | Single |
| Minimum DC current gain (hFE) | 30 |
| Maximum operating temperature | 135 °C |
| Polarity/channel type | PNP |
| surface mount | NO |
| MJE350T | 2SB856A | 2SB856B | 2SB856 | |
|---|---|---|---|---|
| Description | Transistor | Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN |
| package instruction | , | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | compliant | compli | compli | compli |
| Maximum collector current (IC) | 0.5 A | 3 A | 3 A | 3 A |
| Configuration | Single | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 30 | 35 | 60 | 35 |
| Maximum operating temperature | 135 °C | 150 °C | 150 °C | 150 °C |
| Polarity/channel type | PNP | PNP | PNP | PNP |
| surface mount | NO | NO | NO | NO |
| Is it Rohs certified? | - | incompatible | incompatible | incompatible |
| Parts packaging code | - | SFM | SFM | SFM |
| Contacts | - | 3 | 3 | 3 |
| ECCN code | - | EAR99 | EAR99 | EAR99 |
| Collector-emitter maximum voltage | - | 50 V | 50 V | 50 V |
| JEDEC-95 code | - | TO-220AB | TO-220AB | TO-220AB |
| JESD-30 code | - | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| JESD-609 code | - | e0 | e0 | e0 |
| Number of components | - | 1 | 1 | 1 |
| Number of terminals | - | 3 | 3 | 3 |
| Package body material | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | - | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Maximum power consumption environment | - | 25 W | 25 W | 25 W |
| Maximum power dissipation(Abs) | - | 25 W | 25 W | 25 W |
| Certification status | - | Not Qualified | Not Qualified | Not Qualified |
| Terminal surface | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | - | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | - | SINGLE | SINGLE | SINGLE |
| Transistor component materials | - | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | - | 10 MHz | 10 MHz | 10 MHz |
| VCEsat-Max | - | 1.5 V | 1.2 V | 1.2 V |
| Base Number Matches | - | 1 | 1 | 1 |
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