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2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459
2N5457
2N5458
2N5459
MMBF5457
MMBF5458
MMBF5459
G
S
G
S
TO-92
D
SOT-23
Mark: 6D / 61S / 6L
D
NOTE: Source & Drain
are interchangeable
N-Channel General Purpose Amplifier
This device is a low level audio amplifier and switching transistors,
and can be used for analog switching applications. Sourced from
Process 55.
Absolute Maximum Ratings*
Symbol
V
DG
V
GS
I
GF
T
J
, T
stg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
TA = 25°C unless otherwise noted
Parameter
Value
25
- 25
10
-55 to +150
Units
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2N5457-5459
625
5.0
125
357
Max
*MMBF5457-5459
350
2.8
556
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997
Fairchild Semiconductor Corporation
2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459
N-Channel General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V
(BR)GSS
I
GSS
V
GS(off)
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
I
G
= 10
µA,
V
DS
= 0
V
GS
= -15 V, V
DS
= 0
V
GS
= -15 V, V
DS
= 0, T
A
= 100°C
5457
V
DS
= 15 V, I
D
= 10 nA
5458
5459
V
DS
= 15 V, I
D
= 100
µA
5457
V
DS
= 15 V, I
D
= 200
µA
5458
V
DS
= 15 V, I
D
= 400
µA
5459
- 25
- 1.0
- 200
- 6.0
- 7.0
- 8.0
- 2.5
- 3.5
- 4.5
V
nA
nA
V
V
V
V
V
V
- 0.5
- 1.0
- 2.0
V
GS
Gate-Source Voltage
ON CHARACTERISTICS
I
DSS
Zero-Gate Voltage Drain Current*
V
DS
= 15 V, V
GS
= 0
5457
5458
5459
1.0
2.0
4.0
3.0
6.0
9.0
5.0
9.0
16
mA
mA
mA
SMALL SIGNAL CHARACTERISTICS
g
fs
Forward Transfer Conductance*
V
DS
= 15 V, V
GS
= 0, f = 1.0 kHz
5457
5458
5459
V
DS
= 15 V, V
GS
= 0, f = 1.0 kHz
V
DS
= 15 V, V
GS
= 0, f = 1.0 MHz
V
DS
= 15 V, V
GS
= 0, f = 1.0 MHz
V
DS
= 15 V, V
GS
= 0, f = 1.0 kHz,
R
G
= 1.0 megohm, BW = 1.0 Hz
1000
1500
2000
10
4.5
1.5
5000
5500
6000
50
7.0
3.0
3.0
µmhos
µmhos
µmhos
µmhos
pF
pF
dB
g
os
C
iss
C
rss
NF
Output Conductance*
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
*
Pulse Test: Pulse Width
≤
300 ms, Duty Cycle
≤
2%
5
Typical Characteristics
Transfer Characteristics
Transfer Characteristics
Power technology
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