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ESAB33-02CS

Description
2.5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size70KB,3 Pages
ManufacturerETC
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ESAB33-02CS Overview

2.5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB

ESAB33(CS)
(5A)
FAST RECOVERY DIODE
(200V / 5A)
Outline drawings, mm
10
+0.5
0
2.7
±0.1
Ø3.6
±0.2
4.5
±0.2
1.32
6.4
±0.2
0
14
-0.5
1
2
3
1.2
3.7
±0.2
0.4
0.8
2.54
5.08
2.7
Features
Soft recovery, low noise
High reliability
JEDEC
EIAJ
TO-220AB
SC-46
Connection diagram
Applications
High speed power switching
1
2
3
Maximum ratings and characteristics
Absolute maximum ratings
Item
Repetitive peak reverse voltage
Non-Repetitive peak reverse voltage
Average output current
Surge current
Operating junction temperature
Storage temperature
Symbol
V
RRM
V
RSM
I
O
I
FSM
T
j
T
stg
Square wave duty=1/2, Tc=110°C
Sine wave 10ms
Conditions
Rating
-02
200
200
5*
30
-40 to +150
-40 to +150
15
±0.2
Unit
V
V
A
A
°C
°C
*
Average forward current of centertap full wave connection
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Forward voltage drop
Reverse current
Reverse recovery time
Thermal resistance
Symbol
V
FM
I
RRM
t
rr
R
th(j-c)
Conditions
I
FM
=2.5A
V
R
=V
RRM
I
F
=0.1A, I
R
=0.1A
I
F
=0.1A, I
R
=0.2A, Irec=0.05A
junction to case
Max.
1.4
100
100
45
5.0
Unit
V
µA
ns
°C/W

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