2N6476LEADFREE datasheet, PDF - EEWORLD Datasheet

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2N6476LEADFREE: DescriptionPower Bipolar Transistor, 4A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size346KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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2N6476LEADFREE Overview

Power Bipolar Transistor, 4A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

2N6476LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TO-220AB
package instruction	TO-220, 3 PIN
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	4 A
Collector-emitter maximum voltage	120 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN (315)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	4 MHz
Base Number Matches	1

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2N6473 2N6474

2N6475 2N6476

NPN

PNP

w w w. c e n t r a l s e m i . c o m

COMPLEMENTARY

SILICON SWITCHING TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N6473, 2N6475

series types are complementary silicon power transistors,

manufactured by the epitaxial base process, designed

for general purpose amplifier and switching applications.

MARKING: FULL PART NUMBER

TO-220 CASE

MAXIMUM RATINGS:

(TC=25°C)

Collector-Base Voltage

Collector-Emitter Voltage (RBE=100Ω)

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Continuous Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCER

VCEO

VEBO

TJ, Tstg

2N6473

2N6475

110

100

2N6474

2N6476

130

120

UNITS

°C

°C/W

5.0

4.0

2.0

-65 to +150

3.125

ELECTRICAL CHARACTERISTICS:

(TC=25°C unless otherwise noted)

2N6473

2N6475

SYMBOL TEST CONDITIONS

MIN

MAX

ICEV

VCE=Rated VCEO, VBE=1.5V

100

ICEV

VCE=Rated VCEO, VBE=1.5V, TC=100°C

2.0

ICER

VCE=Rated VCER, RBE=100Ω

100

ICER

VCE=Rated VCER, RBE=100Ω, TC=100°C

2.0

ICEO

VCE=1/2 Rated VCEO

1.0

IEBO

VEB=5.0V

100

110

2.0

4.0

5.0

1.0

1.2

2.5

2.0

3.5

150

250

BVCEO

IC=100mA

BVCER

IC=100mA, RBE=100Ω

VCE(SAT) IC=1.5A, IB=0.15A

VCE(SAT) IC=4.0A, IB=2.0A

VBE(ON) VCE=4.0V, IC=1.5A

VBE(ON) VCE=2.5V, IC=4.0A

hFE

hfe

Cob

VCE=4.0V,

VCE=2.5V,

VCE=4.0V,

IC=1.5A

IC=4.0A

IC=0.5A, f=50kHz

2N6474

2N6476

MIN

MAX

100

120

130

2.0

4.0

5.0

2.0

100

2.0

1.0

1.2

2.5

2.0

3.5

150

250

UNITS

μA

VCE=4.0V, IC=0.5A (2N6473, 2N6474)

VCE=4.0V, IC=0.5A (2N6475, 2N6476)

VCB=10V, f=1.0MHz

MHz

R1 (1-May 2013)

2N6476LEADFREE Related Products

	2N6476LEADFREE	2N6473LEADFREE	2N6475LEADFREE
Description	Power Bipolar Transistor, 4A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN	Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN	Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Is it lead-free?	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to
Parts packaging code	TO-220AB	TO-220AB	TO-220AB
package instruction	TO-220, 3 PIN	TO-220, 3 PIN	TO-220, 3 PIN
Contacts	3	3	3
Reach Compliance Code	_compli	_compli	_compli
ECCN code	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	4 A	4 A	4 A
Collector-emitter maximum voltage	120 V	100 V	100 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	15	15	15
JEDEC-95 code	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e3	e3	e3
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260	260	260
Polarity/channel type	PNP	NPN	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	10	10	10
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	4 MHz	4 MHz	4 MHz
Base Number Matches	1	1	1

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