BZT03D...
Vishay Telefunken
Silicon Z–Diodes and Transient Voltage Suppressors
Features
D
Glass passivated junction
D
Hermetically sealed package
D
Clamping time in picoseconds
Applications
Medium power voltage regulators and medium power
transient suppression circuits
94 9539
Order Instruction
Type
BZT03D6V2
Ordering Code
BZT03D6V2–TAP
BZT03D6V2–TR
Remarks
Ammopack
Tape and Reel
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Test Conditions
l=10 mm, T
L
=25
°
C
T
amb
=25
°
C
Type
Symbol
P
V
P
V
P
ZRM
P
ZSM
T
j
T
stg
Value
3.25
1.3
10
600
175
–65...+175
Unit
W
W
W
W
°
C
°
C
Repetitive peak reverse power dissipation
Non repetitive peak surge power dissipation t
p
=100
m
s, T
j
=25
°
C
Junction temperature
Storage temperature range
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=10 mm, T
L
=constant
on PC board with spacing 25 mm
Symbol
R
thJA
R
thJA
Value
46
100
Unit
K/W
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=0.5A
Type
Symbol
V
F
Min
Typ
Max
1.2
Unit
V
Document Number 85600
Rev. 3, 12-Mar-01
www.vishay.com
1 (4)
BZT03D...
Vishay Telefunken
Characteristics
(T
j
= 25
_
C unless otherwise specified)
50
3
I
F
– Forward Current ( A )
3.0
2.5
2.0
T
j
= 25°C
1.5
1.0
0.5
0
7
2
94 9086a
94 9585
25
50
0
0.5
1.0
1.5
2.0
V
F
– Forward Voltage ( V )
Figure 1. Epoxy glass hard tissue, board thickness
1.5 mm, R
thJA
100 K/W
x
Figure 3. Forward Current vs. Forward Voltage
4
P
tot
– Total Power Dissipation ( W )
l=10mm
3
15mm
2
20mm
1
see Fig.1
0
0
94 9584
P
ZSM
– Non-Repetitive Surge Power
Dissipation ( W )
l
l
10000
T
j
= 25°C
1000
T
L
=constant
100
40
80
120
160
200
94 9586
10
0.01
0.1
1
10
100
T
amb
– Ambient Temperature (
°C
)
t
p
– Pulse Length ( ms )
Figure 2. Total Power Dissipation vs.
Ambient Temperature
Figure 4. Non Repetitive Surge Power Dissipation vs.
Pulse Length
Dimensions in mm
∅
3.6 max.
Sintered Glass Case
SOD 57
Weight max. 0.5 g
Cathode Identification
technical drawings
according to DIN
specifications
94 9538
∅
0.82 max.
26 min.
4.2 max.
26 min.
Document Number 85600
Rev. 3, 12-Mar-01
www.vishay.com
3 (4)
BZT03D...
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.com
4 (4)
Document Number 85509
Rev. 3, 12-Mar-01
Power technology
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