BB301MAW-UL datasheet, PDF - EEWORLD Datasheet

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BB301MAW-UL: DescriptionVHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MPAK-4; CategoryDiscrete semiconductor The transistor; File Size209KB，8 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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BB301MAW-UL Overview

VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MPAK-4

BB301MAW-UL Parametric

Parameter Name	Attribute value
Maker	Renesas Electronics Corporation
package instruction	MPAK-4
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW NOISE
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	6 V
Maximum drain current (ID)	0.025 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.04 pF
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Operating mode	DUAL GATE, ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Minimum power gain (Gp)	22 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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BB301MAW-UL Related Products

	BB301MAW-UL	BB301MAW-UR	BB301MAW-TL	BB301MAW-TR
Description	VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MPAK-4	VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MPAK-4	VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MPAK-4	VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MPAK-4
Maker	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation
package instruction	MPAK-4	MPAK-4	MPAK-4	MPAK-4
Contacts	4	4	4	4
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Shell connection	SOURCE	SOURCE	SOURCE	SOURCE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	6 V	6 V	6 V	6 V
Maximum drain current (ID)	0.025 A	0.025 A	0.025 A	0.025 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.04 pF	0.04 pF	0.04 pF	0.04 pF
highest frequency band	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Number of components	1	1	1	1
Number of terminals	4	4	4	4
Operating mode	DUAL GATE, ENHANCEMENT MODE	DUAL GATE, ENHANCEMENT MODE	DUAL GATE, ENHANCEMENT MODE	DUAL GATE, ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Minimum power gain (Gp)	22 dB	22 dB	22 dB	22 dB
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON

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