PRODUCT DATA
Micro International, Inc
PART NUMBER
LDT2222A and LDT2222AT
Micro-LID NPN Transistor
Micro International, Inc.
179-204 Belle Forrest Circle
Nashville, TN 37221
Tel: 615-662-1200 Fax 615-662-1226
www.microlid.com
sales@microlid.com
Micro-LID Transistors
LDT2222A and LDT2222AT
Description:
The LDT2222A (untinned) and LDT2222AT (tinned) are NPN silicon transistors
in very small, rugged, surface mount, 4-post ceramic packages (Micro
International manufactured package p/n 4-075-1). The LDT2222A and
LDT2222AT meet the general specifications of the 2N2222A transistor. The
4-075-1 Micro-LID package is a 4-post, leadless ceramic carrier which can be
provided with gold metallized or pre-tinned lands, and is approved for military,
medical implant, sensor, and high reliability applications. The LDT2222A and
LDT2222AT can be provided with special feature options such as additional
temperature cycling and screening.
Maximum Ratings:
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Dissipation
Operating Junction Temperature
Storage Temperature
Operating Temperature
Symbol
Vcbo
Vceo
Vebo
Ic
Pt
Tj
Tstg
Toper
Rating
75 V
40 V
6V
500 mA
350 mW
150°
C
-65° to 150°
C
C
-55° to 125°
C
C
1/3 January 1997
www.microlid.com
sales@microlid.com
Micro-LID Transistors
LDT2222A and LDT2222AT
______________________________________________________________________________________
Outline / Schematic:
TOP VIEW
3
.040
2
2
3, 4
1
4
1
.075
SIDE VIEW
END VIEW
.035
SUBSTRATE / CIRCUIT BOARD
Dimensions / Marking:
Length
Width
Height
.075′+ .003′
′
′
.040′+ .003′
′
′
.035′+ .003′
′
′
Post 1 (Emitter)
Post 2 (Base)
Post 3,4 (Collector)
.015′ .010′typ
′
x
′
.015′ .010′typ
′
x
′
.015′ .012′typ
′
x
′
Marking on back of package : Black Dot over Emitter and Red Dot in Center
(post down configuration)
Standard In-Process Screening Requirements:
Ø
Ø
Ø
Ø
Ø
Semiconductor die and Micro-LID package visual inspection
Wire pull test
24 hour stabilization bake at 150°
C
10 temperature cycles from –55° to 125°
C
C
100% electrical test of dc characteristics at 25°
C
Ø
Final visual inspection
________________________________________________________________
2/3 January 1997
www.microlid.com
sales@microlid.com
Micro-LID Transistors
LDT2222A and LDT2222AT
Electrical Characteristics (25° Ambient)
C
Parameter
Collector-Base Breakdown
Ic = 10 uA, Ie = 0
Collector-Emitter Breakdown*
Ib = 0, Ic = 10 mA
Emitter-Base Breakdown
Ic = 0, Ie = 10 uA
Collector-Base Cutoff Current
Vcb = 60 V
Emitter-Base Cutoff Current
Veb = 3 V
DC Forward Current Gain*
Ic = 1 mA, Vce =10 V
Ic = 150 mA, Vce = 10 V
Collector-Emitter Saturation
Ic = 150 mA, Ib = 15 mA
Base-Emitter Saturation
Ic = 150 mA, Ib = 15 mA
Collector Capacitance
Vcb = 10 V, Ie = 0
f = 1 MHz
Symbol
BVcbo
Min
75
Typ
--
Max
--
Units
V
BVceo
40
--
--
V
BVebo
6
--
--
V
Icbo
--
--
10
nA
Iebo
--
--
10
nA
Hfe
50
100
Vce (sat)
--
--
--
300
.3
V
--
Vbe (sat)
--
--
1.2
V
Cobo
--
--
8
pF
* Pulse test, pulse width < 300 usec, duty cycle < 2%
3/3 January 1997
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