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LDT5210

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size129KB,4 Pages
ManufacturerMicronova Technology Inc
Download Datasheet Parametric Compare View All

LDT5210 Overview

Transistor

LDT5210 Parametric

Parameter NameAttribute value
MakerMicronova Technology Inc
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)200
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.35 W
surface mountYES
MNT
MicroNova Technology
914 Harpeth Valley Place Nashville, TN 37221
Tel: 615.662.1200 Fax: 615.662.1226
www.micronovatech.com
PRODUCT DATA
LDT5210
and
LDT5210T
Micro-LID NPN Transistors
For Information & Sales Contact
MicroNova Technology
tlh@micronovatech.com
or
sales@micronovatech.com

LDT5210 Related Products

LDT5210 LDT5210T
Description Transistor Transistor
Maker Micronova Technology Inc Micronova Technology Inc
Reach Compliance Code unknown unknown
Maximum collector current (IC) 0.1 A 0.1 A
Configuration Single Single
Minimum DC current gain (hFE) 200 200
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.35 W 0.35 W
surface mount YES YES
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