Agilent MSA-2011, MSA-2086
Silicon Bipolar RFIC Amplifiers
Data Sheet
Features
MSA-2011
• Surface Mount SOT-143
Package
• 3 dB Bandwidth:
DC to 1.0 GHz
• 16.2 dB Gain at 1 GHz
• 4.3 dB NF at 1 GHz
• Lead-free Option Available
Description
The MSA-2011 and MSA-2086 are
high performance silicon bipolar
RFIC amplifiers designed to be
cascadable in 50
Ω
systems. The
stability factor of K > 1
contributes to easy cascading in
numerous narrow and broadband
IF and RF commercial and
industrial applications.
The MSA-2011 and -2086 are
fabricated using a 10 GHz f
T
, 25
GHz F
MAX
, silicon bipolar RFIC
process which utilizes nitride self-
alignment, ion implantation, and
gold metallization to achieve
excellent uniformity, perform-
ance, and reliability. The use of an
external bias resistor for
temperature and current stability
also allows bias flexibility.
Package options include the
industry standard plastic surface
mount SOT-143 package and the
85 mil surface mountable plastic
microstripline package.
MSA-2011
MSA-2086
MSA-2086
• Surface Mount Plastic
Microstrip Package
• 3 dB Bandwidth:
DC to 1.1 GHz
• 16.6 dB Gain at 1 GHz
• 3.7 dB NF at 1 GHz
• Lead-free Option Available
2
Absolute Maximum Ratings
[1]
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction
Temperature
Storage Temperature
Thermal
Resistance:
θ
jc
MSA-2011
50 mA
250 mW
[3a]
+13 dBm
150°C
-65 to 150°C
500°C/W
MSA-2086
60 mA
325 mW
[3c]
+13 dBm
150°C
-65 to 150°C
115°C/W
Typical Biasing
Configuration
R
bias
V
CC
≥
7 V
4
DC BLOCK
INPUT
1
MSA
2
3
V
d
= 5 V
RF CHOKE
OUTPUT
R
bias
= V
CC
– V
d
I
d
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3a. Derate at 2.0 mW/°C for T
C
> 25°C.
b. Derate at 6.5 mW/°C for T
C
> 149°C.
c. Derate at 8.7 mW/°C for T
C
> 112°C.
Electrical Specifications, T
A
= 25
°
C
I
D
= 32 mA, Z
o
= 50
Ω
MSA-2011
Symbol
G
P
Parameters and
Test Conditions
Power Gain
(|S
21
|
2
)
f = 0.1 GHz
f = 0.5 GHz
f = 1.0 GHz
Gain Flatness
f = 0.1 to 0.6 GHz
3 dB Bandwidth
Input VSWR
f = 0.1 to 3.0 GHz
Output VSWR
f = 0.1 to 3.0 GHz
P
1dB
Power Output @
1 dB Gain
Compression:
f = 1.0 GHz
50
Ω
Noise Figure
f = 1.0 GHz
Third Order
Intercept
Point
f = 1.0 GHz
Group Delay
f = 1.0 GHz
Device Voltage
T
C
= 25°C
Device Voltage
Temperature
Coefficient
Units
Min.
Typ.
Max.
Min.
MSA-2086
Typ.
Max.
dB
15.0
dB
GHz
18.9
18.1
16.2
±0.6
1.0
1.3:1
1.4:1
15.0
19.2
18.3
16.6
±0.6
1.1
1.2:1
1.5:1
∆G
P
f
3dB
VSWR
dBm
dB
9.0
4.3
9.0
3.7
NF
IP
3
dBm
22
22
t
d
V
D
dV/dT
psec
V
mV/°C
4.0
143
5.0
-9.3
6.0
4.5
143
5.0
-9.3
6.3
3
Typical Performance for MSA-2011
25
20
19
20
-55°C
-25°C
Gp (dB)
25°C
15
85°C
18
17
0.5 GHz
0.1 GHz
16
14
12
10
40 mA
35 mA
30 mA
16
1.0 GHz
15
14
13
12
2.0 GHz
P
1dB
(dBm)
GAIN (dB)
8
25 mA
6
4
20 mA
2
0
10
5
0.1
1.0
FREQUENCY (GHz)
4.0
11
20
25
30
I
d
(mA)
35
40
0.1
1.0
FREQUENCY (GHz)
4.0
Figure 1. Power Gain vs. Frequency at
Four Temperatures, I
D
= 32 mA.
Figure 2. Power Gain vs. Current at
25
°
C.
Figure 3. Typical P
1dB
vs. Frequency at
25
°
C.
6
GAIN (dB)
17
G
P
16
NOISE FIGURE (dB)
40
-55°C
-25°C
25°C
NOISE FIGURE (dB)
5
40 mA
P
1dB
(dBm)
15
6
5
NF
30
85°C
I
D
mA
20
20 mA
4
10
9
8
7
-25
P
1dB
4
3
10
3
0.1
1.0
FREQUENCY (GHz)
4.0
0
25
AMBIENT TEMPERATURE (°C)
85
0
1
2
3
V
D
(VOLTS)
4
5
6
Figure 4. Noise Figure vs. Frequency
at I
D
= 32 mA.
Figure 5. Power Gain, Noise Figure,
and P
1dB
vs. Temperature at 1 GHz and
I
D
= 32 mA.
Figure 6. I
D
vs. V
D
at Four
Temperatures.
5
Typical Performance for MSA-2086
25
20
19
0.1 GHz
0.5 GHz
16
14
12
30 mA
P
1dB
(dBm)
1.0 GHz
40 mA
35 mA
20
GAIN (dB)
15
Gp (dB)
-55°C
25°C
85°C
125°C
18
17
10
8
6
20 mA
4
2
0
25 mA
16
15
14
2.0 GHz
13
12
10
5
0
0.1
1.0
FREQUENCY (GHz)
4.0
11
20
25
30
I
d
(mA)
35
40
0.1
1.0
FREQUENCY (GHz)
4.0
Figure 1. Power Gain vs. Frequency at
Four Temperatures, I
D
= 32 mA.
Figure 2. Power Gain vs. Current at
25
°
C.
Figure 3. Typical P
1dB
vs. Frequency at
25
°
C.
5
GAIN (dB)
17
16
15
G
P
40
-55°C
-25°C
25°C
NOISE FIGURE (dB)
NOISE FIGURE (dB)
4.5
6
5
30
85°C
I
D
mA
20 mA
4
10
NF
20
4
3
40 mA
3.5
P
1dB
(dBm)
9
P
1dB
8
7
-25
10
3
0.1
1.0
FREQUENCY (GHz)
4.0
0
25
AMBIENT TEMPERATURE (°C)
85
0
1
2
3
V
D
(VOLTS)
4
5
6
Figure 4. Noise Figure vs. Frequency
at I
D
= 32 mA.
Figure 5. Power Gain, Noise Figure,
and P
1dB
vs. Temperature at 1 GHz and
I
D
= 32 mA.
Figure 6. I
D
vs. V
D
at Four
Temperatures.
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