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BSP171PL6327

Description
Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-4
CategoryDiscrete semiconductor    The transistor   
File Size614KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BSP171PL6327 Overview

Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-4

BSP171PL6327 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)70 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)1.9 A
Maximum drain current (ID)1.9 A
Maximum drain-source on-resistance0.3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)1.8 W
Maximum pulsed drain current (IDM)7.6 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
BSP171P
SIPMOS
®
Small-Signal-Transistor
Features
• P-Channel
• Enhancement mode
• Logic level
• Avalanche rated
• dv /dt rated
• Pb-free lead plating; RoHS compliant
Product Summary
V
DS
R
DS(on),max
I
D
-60
0.3
-1.9
V
A
PG-SOT223
• Qualified according to AEC Q101
• Halogen­free according to IEC61249­2­21
Type
BSP171P
Package
PG-SOT223
Tape and Reel Information
H6327:
1000 pcs/reel
Marking
BSP171P
Packaging
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
steady state
Continuous drain current
I
D
T
A
=25 °C
1)
T
A
=70 °C
1)
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=-1.9 A,
R
GS
=25
I
D
=-1.9 A,
V
DS
=-48 V,
di /dt =-200 A/µs,
T
j,max
=150 °C
-1.9
-1.5
-7.6
70
mJ
A
Unit
Reverse diode dv /dt
dv /dt
-6
kV/µs
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V
GS
P
tot
T
j
,
T
stg
T
A
=25 °C
1)
±20
1.8
-55 ... 150
55/150/56
V
W
°C
ESD Class; JESD22-A114-HBM
Rev 2.6
page 1
Class 1a
2012-11-26
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