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K7N803601M-TC10

Description
ZBT SRAM, 256KX36, 5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
Categorystorage    storage   
File Size390KB,17 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K7N803601M-TC10 Overview

ZBT SRAM, 256KX36, 5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

K7N803601M-TC10 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeQFP
package instructionLQFP,
Contacts100
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time5 ns
JESD-30 codeR-PQFP-G100
length20 mm
memory density9437184 bit
Memory IC TypeZBT SRAM
memory width36
Number of functions1
Number of terminals100
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX36
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
width14 mm
K7N803601M
K7N801801M
Document Title
256Kx36-Bit Pipelined NtRAM
TM
256Kx36 & 512Kx18 Pipelined NtRAM
TM
Revision History
Rev. No.
0.0
0.1
History
1. Initial document.
1. Changed DC parameters
I
CC
; from 450mA to 420mA at 150MHZ.
I
SB1
; from 10mA to 20mA, I
SB2
; from 10mA to 20mA.
1. Changed t
CD
from 4.0ns to 4.2ns at -75
2. Changed DC condition at Icc and parameters
I
SB1
; from 20mA to 30mA,
I
SB2
; from 20mA to 30mA.
1. A
DD
119BGA(7x17 Ball Grid Array Package) .
2. A
DD
x32 organization.
1.Changed V
OL
Max value from 0.2V to 0.4V at 2.5V I/O.
1. Final Spec Release.
2. Remove x32 organization.
1. Remove V
DDQ
Supply voltage( 2.5V I/O )
1. Changed t
OE
from 4.2ns to 3.8ns at -75 , from 5.0ns to 3.8ns at -10
1. Add V
DDQ
Supply voltage( 2.5V I/O )
1. Add tCYC 167MHz and 200MHz.
2. Remove 119BGA package.
3. Changed DC condition at Icc and parameters
Icc ; from 420mA to 350mA at -67,
from 370mA to 300mA at -75,
from 300mA to 250mA at -10,
Draft Date
June. 09. 1998
Aug. 19. 1998
Remark
Preliminary
Preliminary
0.2
Sep. 09. 1998
Preliminary
0.3
Oct. 15. 1998
Preliminary
0.4
1.0
Dec. 23 .1998
Jan. 29. 1999
Preliminary
Final
2.0
3.0
4.0
Feb. 25. 1999
Mar. 22. 1999
May. 13. 1999
Nov. 19. 1999
Final
Final
Final
Final
5.0
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
November 1999
Rev 5.0
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