BAT17-06WE6433 datasheet, PDF - EEWORLD Datasheet

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BAT17-06WE6433: DescriptionMixer Diode, Very High Frequency to Ultra High Frequency, Silicon; CategoryDiscrete semiconductor diode; File Size61KB，3 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BAT17-06WE6433 Overview

Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon

BAT17-06WE6433 Parametric

Parameter Name	Attribute value
Maker	SIEMENS
package instruction	R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Minimum breakdown voltage	4 V
Configuration	COMMON ANODE, 2 ELEMENTS
Maximum diode capacitance	0.75 pF
Diode component materials	SILICON
Diode type	MIXER DIODE
Maximum forward voltage (VF)	0.6 V
frequency band	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 code	R-PDSO-G3
Number of components	2
Number of terminals	3
Maximum operating temperature	150 °C
Maximum output current	130 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.15 W
Certification status	Not Qualified
Maximum reverse current	10 µA
surface mount	YES
technology	SCHOTTKY
Terminal form	GULL WING
Terminal location	DUAL

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BAT17-06WE6433 Related Products

	BAT17-06WE6433	BAT17-04WE6327	BAT17-04WE6433	BAT17-05WE6327	BAT17-05WE6433	BAT17-06WE6327
Description	Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon	Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon	Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon	Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon	Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon	Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon
Maker	SIEMENS	SIEMENS	SIEMENS	SIEMENS	SIEMENS	SIEMENS
package instruction	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Minimum breakdown voltage	4 V	4 V	4 V	4 V	4 V	4 V
Configuration	COMMON ANODE, 2 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS
Maximum diode capacitance	0.75 pF	0.75 pF	0.75 pF	0.75 pF	0.75 pF	0.75 pF
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	MIXER DIODE	MIXER DIODE	MIXER DIODE	MIXER DIODE	MIXER DIODE	MIXER DIODE
Maximum forward voltage (VF)	0.6 V	0.6 V	0.6 V	0.6 V	0.6 V	0.6 V
frequency band	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	2	2	2	2	2	2
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	130 A	130 A	130 A	130 A	130 A	130 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Maximum power dissipation	0.15 W	0.15 W	0.15 W	0.15 W	0.15 W	0.15 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum reverse current	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA
surface mount	YES	YES	YES	YES	YES	YES
technology	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Base Number Matches	-	1	1	1	1	-

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