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KM416V254DT-L6

Description
EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, TSOP2-44/40
Categorystorage    storage   
File Size840KB,36 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

KM416V254DT-L6 Overview

EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, TSOP2-44/40

KM416V254DT-L6 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeTSOP2
package instructionTSOP2, TSOP40/44,.46,32
Contacts44
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time60 ns
Other featuresCAS BEFORE RAS/RAS ONLY/HIDDEN/SELF REFRESH
I/O typeCOMMON
JESD-30 codeR-PDSO-G40
JESD-609 codee0
length18.41 mm
memory density4194304 bit
Memory IC TypeEDO DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals40
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP40/44,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle512
Maximum seat height1.2 mm
self refreshYES
Maximum standby current0.0001 A
Maximum slew rate0.07 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
KM416C254D, KM416V254D
CMOS DRAM
256K x 16Bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access
of memory cells within the same row. Power supply voltage(+5.0V or +3.3V), Access time (-5,-6 or -7), power consumption(Normal or
Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-
only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 256Kx16 EDO Mode
DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reli-
ability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
• Extended Data Out Mode operation
FEATURES
• Part Identification
- KM416C254D/DL (5V, 512 Ref.)
- KM416V254D/DL (3.3V, 512 Ref.)
• 2 CAS Byte/Wrod Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in 40-pin SOJ 400mil and 44(40)-pin
packages
• Triple +5V±10% power supply (5V product)
• Triple +3.3V±0.3V power supply (3.3V product)
Active Power Dissipation
Speed
-5
-6
-7
Refresh Cycles
Part
NO.
C254D
V254D
V
CC
5V
3.3V
Refresh
cycle
512
3.3V(512 Ref.)
-
255
235
Unit : mW
5V(512 Ref.)
605
495
440
FUNCTIONAL BLOCK DIAGRAM
Refresh period
Normal
8ms
L-ver
128ms
RAS
UCAS
LCAS
W
Control
Clocks
VBB Generator
Vcc
Vss
Lower
Data in
Buffer
Sense Amps & I/O
Lower
Data out
Buffer
Upper
Data in
Buffer
Upper
Data out
Buffer
Refresh Timer
Row Decoder
Performance Range
Refresh Control
DQ0
to
DQ7
Speed
-5
-6
-7
t
RAC
50ns
60ns
70ns
t
CAC
15ns
15ns
20ns
t
RC
84ns
104ns
124ns
t
HPC
20ns
25ns
30ns
Remark
5V only
5V/3.3V
5V/3.3V
A0~A8
Col. Address Buffer
Refresh Counter
Row Address Buffer
Memory Array
262,144 x16
Cells
OE
Column Decoder
DQ8
to
DQ15
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
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