K4R441869A-MCG6 datasheet, PDF

K4R441869A-MCG6: DescriptionRambus DRAM, 8MX18, 53.3ns, CMOS, PBGA62, CENTER BONDED, MICRO, CSP, BGA-62; Categorystorage storage; File Size374KB，20 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4R441869A-MCG6 Overview

Rambus DRAM, 8MX18, 53.3ns, CMOS, PBGA62, CENTER BONDED, MICRO, CSP, BGA-62

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	VBGA, BGA62,12X9,40/32
Contacts	62
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	BLOCK ORIENTED PROTOCOL
Maximum access time	53.3 ns
Other features	SELF CONTAINED REFRESH
Maximum clock frequency (fCLK)	600 MHz
I/O type	COMMON
JESD-30 code	R-PBGA-B62
JESD-609 code	e0
length	12 mm
memory density	150994944 bit
Memory IC Type	RAMBUS DRAM
memory width	18
Number of functions	1
Number of ports	1
Number of terminals	62
word count	8388608 words
character code	8000000
Operating mode	SYNCHRONOUS
organize	8MX18
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	VBGA
Encapsulate equivalent code	BGA62,12X9,40/32
Package shape	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	1.8/2.5,2.5 V
Certification status	Not Qualified
refresh cycle	16384
reverse pinout	YES
Maximum seat height	1 mm
self refresh	YES
Maximum supply voltage (Vsup)	2.63 V
Minimum supply voltage (Vsup)	2.37 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.2 mm

K4R271669A/K4R441869A

Direct RDRAM

™

128/144Mbit RDRAM(A-die)

256K x 16/18 bit x 32s banks

Direct RDRAM

Version 1.11

October 2000

Page -1

Version 1.11 Oct. 2000

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