Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
| Parameter Name | Attribute value |
| Parts packaging code | SFM |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 4 A |
| Collector-emitter maximum voltage | 60 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 25 |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 40 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 2.5 MHz |
| Base Number Matches | 1 |
| 2N6122 | 2N5294 | |
|---|---|---|
| Description | Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 4A I(C), 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220B, 3 PIN |
| Parts packaging code | SFM | TO-220AB |
| package instruction | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 | 3 |
| Reach Compliance Code | unknow | unknow |
| Maximum collector current (IC) | 4 A | 4 A |
| Configuration | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 25 | 30 |
| JEDEC-95 code | TO-220AB | TO-220AB |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 3 |
| Maximum operating temperature | 150 °C | 140 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | NPN | NPN |
| Maximum power dissipation(Abs) | 40 W | 36 W |
| Certification status | Not Qualified | Not Qualified |
| surface mount | NO | NO |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE |
| Transistor component materials | SILICON | SILICON |
| Nominal transition frequency (fT) | 2.5 MHz | 0.8 MHz |
| Base Number Matches | 1 | 1 |
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