Philips Semiconductors
Product specification
Dual 2-to-4 line decoder/demultiplexer
FEATURES
•
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
CDM EIA/JESD22-C101 exceeds 1000 V
•
Balanced propagation delays
•
All inputs have Schmitt trigger actions
•
Inputs accept voltages higher than V
CC
•
For AHC only: operates with CMOS input levels
•
For AHCT only: operates with TTL input levels
•
Specified from
−40
to +85
°C
and
−40
to +125
°C.
DESCRIPTION
74AHC139;
74AHCT139
The 74AHC/AHCT139 are high-speed Si-gate CMOS
devices and are pin compatible with low power Schottky
TTL (LSTTL). They are specified in compliance with
JEDEC standard no. 7A.
The 74AHC/AHCT139 are high-speed, dual 2-to-4 line
decoder/demultiplexers.
This device has two independent decoders, each
accepting two binary weighted inputs (nA
0
and nA
1
) and
providing four mutually exclusive active LOW outputs
(nY
0
to nY
3
). Each decoder has an active LOW enable
input (nE). When nE is HIGH, every output is forced HIGH.
The enable input can be used as the data input for a 1-to-4
demultiplexer application.
The ‘139’ is identical to the HEF4556 of the HE4000B
family.
QUICK REFERENCE DATA
Ground = 0 V; T
amb
= 25
°C;
t
r
= t
f
≤
3.0 ns.
TYPICAL
SYMBOL
t
PHL
/t
PLH
PARAMETER
propagation delay
nA
n
to nY
n
nE to nY
n
C
I
C
O
C
PD
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
+
∑
(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
∑
(C
L
×
V
CC2
×
f
o
) = sum of outputs;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts.
2. The condition is V
I
= GND to V
CC
.
input capacitance
output capacitance
power dissipation capacitance
C
L
= 50 pF; f = 1 MHz;
notes 1 and 2
V
I
= V
CC
or GND
CONDITIONS
AHC
C
L
= 15 pF; V
CC
= 5 V
3.9
3.4
3.0
4.0
25.76
4.7
3.6
3.0
4.0
22.36
ns
ns
pF
pF
pF
AHCT
UNIT
1999 Sep 01
2
Philips Semiconductors
Product specification
Dual 2-to-4 line decoder/demultiplexer
RECOMMENDED OPERATING CONDITIONS
74AHC
SYMBOL
V
CC
V
I
V
O
T
amb
t
r
,t
f
(∆t/∆f)
PARAMETER
DC supply voltage
input voltage
output voltage
operating ambient
temperature
see DC and AC
characteristics per device
V
CC
= 5
±0.5
V
CONDITIONS
MIN.
2.0
0
0
−40
−40
−
−
TYP. MAX. MIN.
5.0
−
−
+25
+25
−
−
5.5
5.5
V
CC
+85
100
20
4.5
0
0
−40
−
−
74AHC139;
74AHCT139
74AHCT
UNIT
TYP. MAX.
5.0
−
−
+25
+25
−
−
5.5
5.5
V
CC
+85
−
20
V
V
V
°C
ns/V
+125
−40
+125
°C
input rise and fall ratio V
CC
= 3.3
±0.3
V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
V
I
I
IK
I
OK
I
O
I
CC
T
stg
P
D
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO package: above 70
°C
the value of P
D
derates linearly with 8 mW/K.
For TSSOP package: above 60
°C
the value of P
D
derates linearly with 5.5 mW/K.
PARAMETER
DC supply voltage
input voltage
DC input diode current
DC output diode current
DC output source or sink current
DC V
CC
or GND current
storage temperature
power dissipation per package
for temperature range:
−40
to +125
°C;
note 2
V
I
<
−0.5
V; note 1
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V; note 1
−0.5
V < V
O
< V
CC
+ 0.5 V
CONDITIONS
MIN. MAX. UNIT
−0.5
−0.5
−
−
−
−
−65
−
+7.0
+7.0
−20
±20
±25
±75
500
V
V
mA
mA
mA
mA
mW
+150
°C
1999 Sep 01
5
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