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L819GGD

Description
Single Color LED, Green, Diffused, T-4, 10mm, ROHS COMPLIANT PACKAGE-3
CategoryLED optoelectronic/LED    photoelectric   
File Size177KB,6 Pages
ManufacturerKingbright
Websitehttp://www.us.kingbright.com
Environmental Compliance  
Download Datasheet Parametric View All

L819GGD Overview

Single Color LED, Green, Diffused, T-4, 10mm, ROHS COMPLIANT PACKAGE-3

L819GGD Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerKingbright
package instructionROHS COMPLIANT PACKAGE-3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresIC COMPATIBLE, HIGH RELIABILITY
colorGREEN
color@wavelengthYellow
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Maximum forward current0.025 A
Maximum forward voltage2.8 V
Lens typeDIFFUSED
minimum luminous intensity140 cd
Nominal luminous intensity40.0 mcd
Installation featuresRADIAL MOUNT
Number of functions1
Number of terminals3
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Optoelectronic device typesSINGLE COLOR LED
total height13.5 mm
method of packingBULK
peak wavelength565 nm
shapeROUND
size10 mm
surface mountNO
T codeT-4
Terminal pitch2.54 mm
perspective50 deg
10mm BI-POLAR AND BI-COLOR
INDICATOR LAMPS
Features
UNIFORM LIGHT OUTPUT.
LOW POWER CONSUMPTION.
3 LEADS WITH ONE COMMON CATHODE LEAD.
THIRD COLOR (MIXED COLOR) AVAILABLE.
SUPER BRIGHT VERSION AVAILABLE.
I.C. COMPATIBLE.
LONG LIFE - SOLID STATE RELIABILITY.
L819 SERIES
Package Dimensions
Description
The High Efficiency Red and Orange source color devices
are made with Gallium Arsenide Phosphide on Gallium
Phosphide Orange Light Emitting Diode.
The Green source color devices are made with Gallium
Phosphide Green Light Emitting Diode.
The Yellow source color devices are made with Gallium
Arsenide Phosphide on Gallium Phosphide Yellow Light
Emitting Diode.
The Super Bright Red source color devices are made with
Gallium Aluminum Arsenide Red Light Emitting Diode.
The Hyper Red (SURK) source color devices are made
with DH InGaAlP on GaAs substrate Light Emitting Diode.
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is
±0.25(0.01")
unless otherwise noted.
3. Lead spacing is measured where the lead emerge package.
4. Specifications are subjected to change without notice.
Selection Guide
Par t No .
Di c e
HIGH EFFICIENCY RED (GaAsP/GaP)
HIGH EFFICIENCY RED (GaAsP/GaP)
GREEN (GaP)
GREEN (GaP)
YELLOW (GaAsP/GaP)
YELLOW (GaAsP/GaP)
HIGH EFFICIENCY RED (GaAsP/GaP)
GREEN (GaP)
SUPER BRIGHT RED (GaAlAs)
SUPER BRIGHT GREEN (GaP)
HYPER RED (InGaAlP)
SUPER BRIGHT GREEN (GaP)
L en s Ty p e
Iv (mc d )
@ 20 mA
Min .
L819IID
L819GGD
L819YYD
L819EGW
L819SRSGW/CC
L819SURKSGW
RED DIFFUSED
GREEN DIFFUSED
YELLOW DIFFUSED
WHITE DIFFUSED
WHITE DIFFUSED
WHITE DIFFUSED
20
20
12
12
12
12
30
20
100
30
300
30
Ty p .
70
70
40
40
30
30
80
50
200
50
600
50
View in g
An g l e
2θ1/2
50°
50°
50°
50°
50°
50°
Note:
1.
θ1/2
is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value.
SPEC NO: DSAA0300
REV NO: V.1
DATE: MAR/15/2001
PAGE: 1 OF 6

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