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BZX584B9V1-M0RSG

Description
Zener Diode,
CategoryDiscrete semiconductor    diode   
File Size242KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

BZX584B9V1-M0RSG Overview

Zener Diode,

BZX584B9V1-M0RSG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
JESD-609 codee3
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Terminal surfaceMatte Tin (Sn)
Maximum time at peak reflow temperatureNOT SPECIFIED
BZX584B4V7 ~ BZX584B20
Taiwan Semiconductor
Small Signal Product
2% Zener Voltage Tolerance SMD Zener Diode
FEATURES
- Wide zener voltage range selection: 4.7V to 20V
- Surface Mount Device type
- Moisture sensitivity level 1
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
SOD-523F
MECHANICAL DATA
- Case: SOD-523F small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 1.3mg ± 20 %
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power Dissipation
Forward Voltage
Thermal Resistance (Junction to Ambient)
Junction Temperature
Junction and Storage Temperature Range
Note1: Valid provided that electrodes are kept at ambient temperature
SYMBOL
P
D
V
F
R
θJA
T
J
T
STG
VALUE
150
0.9
833
150
- 55 to + 150
UNIT
mW
V
o
I
F
= 10 mA
(Note 1)
C/W
o
o
C
C
Zener I vs. V Characteristics
V
BR
I
ZK
Z
ZK
I
ZT
V
Z
Z
ZT
I
ZM
V
ZM
: Voltage at I
ZK
: Test current for voltage V
BR
: Dynamic impedance at I
ZK
: Test current for voltage V
Z
: Voltage at current I
: Dynamic impedance at I
ZT
: Maximum steady state current
: Voltage at I
ZM
Document Number: DS_S1403006
Version: A14
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