BZX584C2V4 Series
Surface Mount Zener Diodes
P b
Lead(Pb)-Free
SMALL SIGNAL
ZENER DIODES
150m WATTS
Features:
* Planar Die Construction
* Ultra-Small Surface Mount Package
* General purpose, Medium Current
* Ideally Suited for Automated Assembly Processes
* 150mW Power Dissipation
* Zener Voltages from 2.4 – 39V
1
2
SOD-523
SOD-523 Outline Dimensions
SOD-523
Dim
A
B
C
D
E
J
K
Min
1.10
0.70
0.50
0.25
0.15
0.07
1.50
Max
1.30
0.90
0.70
0.35
0.25
0.20
1.70
P IN 1. C A T HODE
2. A NODE
WEITRON
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18-Jan-2012
BZX584C2V4 Series
Maximum Ratings
Forward Voltage
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Operating and Storage Temperature Range
@TA=25℃
unless otherwise specified
Symbol
@I
F
=10mA
V
F
P
d
R
θ
JA
T
j
,T
STG
Value
0.9
150
625
-65 to +150
Characteristic
WEITRON
Unit
V
mW
℃/w
℃
Electrical Characteristics
@ 25℃ unless otherwise specitied
Maximum
Maximum Zener Impedance
Zener Voltage Range (Note 2)
Type
Number
Type
Code
V
Z
@I
ZT
Nom(V)
BZX584C2V4
BZX584C2V7
BZX584C3V0
BZX584C3V3
BZX584C3V6
BZX584C3V9
BZX584C4V3
BZX584C4V7
BZX584C5V1
BZX584C5V6
BZX584C6V2
BZX584C6V8
BZX584C7V5
BZX584C8V2
BZX584C9V1
BZX584C10
BZX584C11
BZX584C12
BZX584C13
BZX584C15
BZX584C16
BZX584C18
BZX584C20
BZX584C22
BZX584C24
BZX584C27
BZX584C30
BZX584C33
BZX584C36
BZX584C39
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
Y10
Y11
Y12
Y13
Y14
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
Min(V)
2.20
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
31.0
34.0
37.0
Max(V)
2.60
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
38.0
41.0
I
ZT
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
Z
ZT
@I
ZT
(Ω)
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
Z
ZK
@I
ZK
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
I
R
(uA)
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.1
25.2
27.3
Min
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-2.7
-2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
21.4
24.4
27.4
30.4
33.4
mV/°C
Max
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
25.3
29.4
33.4
37.4
41.2
(Note 3)
Current
@ I
ZT
Reverse
coefficient
Typical temperature
Notes:
1. Valid provided that device terminals are kept at ambient temperature.
2.Tested with pulses, period=5ms,pulse width =300us.
3.f = 1KH
Z
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18-Jan-2012
Embedded System
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