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2N6282

Description
Power Bipolar Transistor, 20A I(C), 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size395KB,5 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

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Power Bipolar Transistor, 20A I(C), 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

2N6282 Parametric

Parameter NameAttribute value
Parts packaging codeTO-204AA
package instructionFLANGE MOUNT, O-MBFM-P2
Contacts2
Reach Compliance Codeunknow
Maximum collector current (IC)20 A
ConfigurationSINGLE
Minimum DC current gain (hFE)750
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)160 W
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)4 MHz
Base Number Matches1
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Index Files: 2043  1557  2365  1463  2529  42  32  48  30  51 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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