Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3857
DESCRIPTION
・With
MT-200 package
・Complement
to type 2SA1493
APPLICATIONS
・Audio
and general purpose
PINNING(see Fig.2)
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (MT-200) and symbol
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
电半
固
PARAMETER
Collector-base voltage
导½
CONDITIONS
Open emitter
HA
INC
Collector current
Base current
Collector-emitter voltage
Emitter-base voltage
ES
NG
Open base
MIC
E
OR
CT
NDU
O
VALUE
200
200
6
15
5
UNIT
V
V
V
A
A
W
℃
℃
Open collector
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
150
150
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=50mA; I
B
=0
I
C
=10 A;I
B
=1 A
V
CB
=200V; I
E
=0
V
EB
=6V; I
C
=0
I
C
=5A ; V
CE
=4V
I
E
=-0.5A ; V
CE
=12V
I
E
=0; V
CB
=10V;f=1MHz
50
20
250
MIN
200
TYP.
2SC3857
MAX
UNIT
V
3.0
100
100
180
V
μA
μA
MHz
pF
Switching times
t
on
t
s
t
f
Turn-on time
固电
Fall time
Storage time
导½
半
h
FE
classifications
O
50-100
P
70-140
ANG
CH
IN
Y
90-180
MIC
E SE
I
C
=5A;R
L
=12Ω
I
B1
=- I
B2
=0.5A
V
CC
=60V
OR
CT
NDU
O
0.30
2.40
0.40
μs
μs
μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3857
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3857
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
4