2N6554LEADFREE datasheet, PDF - EEWORLD Datasheet

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2N6554LEADFREE: DescriptionPower Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-202, Plastic/Epoxy, 3 Pin,; CategoryDiscrete semiconductor The transistor; File Size417KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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2N6554LEADFREE Overview

Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-202, Plastic/Epoxy, 3 Pin,

2N6554LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JEDEC-95 code	TO-202
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN (315)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	10
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	75 MHz
Base Number Matches	1

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2N6551 2N6552 2N6553

2N6554 2N6555 2N6556

COMPLEMENTARY

SILICON TRANSISTORS

NPN

PNP

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N6551, 2N6554

series types are complementary silicon transistors

manufactured by the epitaxial planar process, designed

for general purpose audio amplifier applications.

MARKING: FULL PART NUMBER

TO-202 CASE

2N6551 2N6552 2N6553

SYMBOL 2N6554 2N6555 2N6556

VCBO

60

80

100

VCEO

60

80

100

VEBO

5.0

IC

1.0

ICM

2.0

IB

0.1

PD

2.0

PD

10

TJ, Tstg

-65 to +150

Θ

JA

62.5

Θ

JC

12.5

2N6551

2N6554

MIN MAX

-

100

-

60

5.0

-

60

80

60

25

75

-

100

-

0.5

1.0

1.2

-

300

-

375

18

2N6552

2N6555

MIN MAX

-

100

-

80

5.0

-

60

80

60

25

75

-

100

-

0.5

1.0

1.2

-

300

-

375

18

2N6553

2N6556

MIN MAX

-

100

-

100

-

100

5.0

-

60

80

60

25

75

-

0.5

1.0

1.2

-

300

-

375

18

MHz

pF

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation

Power Dissipation (TC=25°C)

Operating and Storage Junction Temperature

Thermal Resistance

UNITS

V

A

W

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C)

SYMBOL

TEST CONDITIONS

ICBO

VCB=40V

ICBO

VCB=60V

ICBO

VCB=80V

IEBO

VEB=4.0V

BVCBO

lC=100μA

BVCEO

lC=1.0mA

BVEBO

lE=100μA

VCE(SAT)

VBE(ON)

hFE

fT

Cob

lC=250mA, IB=10mA

lC=1.0A, IB=100mA

VCE=5.0V,

VCE=1.0V,

IC=250mA

IC=10mA

IC=50mA

IC=250mA

IC=500mA

UNITS

nA

V

VCE=5.0V, lC=100mA, f=20MHz

VCB=20V, lE=0, f=1.0MHz

R1 (23-January 2012)

2N6554LEADFREE Related Products

	2N6554LEADFREE	2N6551LEADFREE	2N6553LEADFREE	2N6556LEADFREE	2N6552LEADFREE	2N6555LEADFREE
Description	Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-202, Plastic/Epoxy, 3 Pin,	Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-202, Plastic/Epoxy, 3 Pin,	Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-202, Plastic/Epoxy, 3 Pin,	Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-202, Plastic/Epoxy, 3 Pin,	Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-202, Plastic/Epoxy, 3 Pin,	Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-202, Plastic/Epoxy, 3 Pin,
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	compli	compli	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	1 A	1 A	1 A	1 A	1 A	1 A
Collector-emitter maximum voltage	60 V	60 V	100 V	100 V	80 V	80 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	25	25	25	25	25	25
JEDEC-95 code	TO-202	TO-202	TO-202	TO-202	TO-202	TO-202
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e3	e3	e3	e3	e3	e3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260
Polarity/channel type	PNP	NPN	NPN	PNP	NPN	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal surface	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	10	10	10	10	10	10
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	75 MHz	75 MHz	75 MHz	75 MHz	75 MHz	75 MHz
Base Number Matches	1	1	1	1	1	1

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